scholarly journals METHOD FOR PREDICTION OF DISLOCATION GENERATION IN SILICON SUBSTRATES OF SEMICONDUCTOR DEVICES

1998 ◽  
Vol 47 (12Appendix) ◽  
pp. 261-266
Author(s):  
Hiroyuki OHTA ◽  
Hideo MIURA ◽  
Makoto KITANO
Keyword(s):  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Dislocation Generation

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Microstructure and Defects in Implanted Hipox-Structures

1992 ◽  
Vol 280 ◽  
Author(s):  
N. David Theodore ◽  
Peter L. Pegler
Keyword(s):  
High Pressure ◽  
Semiconductor Devices ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Pressure Oxidation ◽  
Electrical Isolation ◽  
And Behavior ◽  
Dislocation Sources ◽  
Induced Dislocation ◽  
High Pressure Oxidation

ABSTRACTHigh-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. The effect of HIPOX-related stresses on isolation structures is of interest because structural-defects, if formed, could electrically degrade devices. The present investigation was performed to study the origin and behavior of defects in recessed HIPOX structures. The structures were exposed to a boron implant. The experimental observations indicate that glide dislocations arise when the following features are present: (i) HIPOX, (ii) recessed edge, (iii) boron implant. The origin and behavior of the defects are modelled and explained in terms of implant-induced dislocation-sources creating glide-dislocations in the structures. The microstructure of the structures described above, and defect-modelling is presented.

Sign in / Sign up

Export Citation Format

Share Document