Effects of Oxide Thickness and Oxidation Parameters on the Electrical Characteristics of Thin Oxides Grown by Rapid Thermal Oxidation of Si in  N 2 O

1994 ◽  
Vol 141 (11) ◽  
pp. 3222-3225 ◽  
Author(s):  
G. Eftekhari
Keyword(s):  
Thermal Oxidation ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation ◽  
Oxidation Parameters

scholarly journals The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

2004 ◽  
Vol 1 (2) ◽  
pp. 41-47
Author(s):  
A. G. Felício ◽  
José Alexandre Diniz ◽  
J. Godoy Fo. ◽  
I. Doi ◽  
M. A. A. Pudenzi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Oxide Thickness ◽  
Silicon Oxynitride ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Gate Insulators ◽  
Rapid Thermal Oxidation ◽  
Nitrogen Ion

Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electrical characteristics, such as field effect mobility between 390 cm2/Vs and 530 cm2/Vs, and sub-threshold slope between 70 mV/decade and 150 mV/decade, were obtained. MOS capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. The Equivalent Oxide Thickness (EOT) of the films were obtained from C-V curves, resulting in values between 2.9 nm and 12 nm. SiOxNy gate insulators with EOT between 2.9 nm and 4.3 nm have presented gate leakage current densities between 3 mA/cm2 and 50 nA/cm2. The electrical characteristics were compared and correlated with the nitrogen concentration profiles at SiOxNy/Si of the structures, obtained by Secondary Ion Mass Spectrometry (SIMS).

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

1990 ◽  
Vol 57 (10) ◽  
pp. 1010-1011 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Bikas Maiti ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation

Uniform Ultra-Thin Oxides Grown by Rapid Thermal Oxidation of Silicon in N2O Ambient

1997 ◽  
Vol 470 ◽  
Author(s):  
G. C. Xing ◽  
D. Lopes ◽  
G. E. Miner
Keyword(s):  
Thermal Oxidation ◽  
Process Parameters ◽  
Flow Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rotation Speed ◽  
Oxide Thickness ◽  
Gas Flow Rate ◽  
Rapid Thermal Oxidation ◽  
Nitrogen Concentrations

ABSTRACTIn this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer rotation speed as well as other process parameters. It was found that N2O oxide uniformity is strongly dependent on gas flow rate and wafer rotation speed in addition to process pressure. With optimized setting of the process parameters, excellent oxidation uniformities (one sigma < 1%) were obtained at atmospheric pressure N2O ambient. Nitrogen concentrations of such uniform oxides grown at 1050°C atmospheric pressure N2O oxidation processes were 1.7% for a 40Å oxide and 2.5% for a 60Å oxide, respectively, as characterized by SIMS analysis.

Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehit ◽  
Ahmad Kermani
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Thermal Cycles ◽  
Gate Oxides ◽  
Rapid Thermal Oxidation ◽  
Mos Devices ◽  
Overall Performance ◽  
Process Uniformity ◽  
Transient Thermal

ABSTRACTRapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

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