Comparison of the electrical characteristics of Si metal–insulator–semiconductor tunnel diodes with interfacial layer grown by rapid thermal oxidation of Si in O2 and in N2O

1995 ◽  
Vol 13 (2) ◽  
pp. 390 ◽  
Author(s):  
G. Eftekhari
Keyword(s):  
Thermal Oxidation ◽  
Interfacial Layer ◽  
Electrical Characteristics ◽  
Tunnel Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Rapid Thermal Oxidation

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes

2020 ◽  
pp. 2000524
Author(s):  
Chen-Sheng Lin ◽  
Duncan W. E. Allsopp ◽  
Kate Cavanagh ◽  
Hei Chit Leo Tsui ◽  
Ling-Shan Yu ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Simple Metal ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultraviolet Emissions

Electrical characteristics of DNA-based metal-insulator-semiconductor structures

2010 ◽  
Vol 107 (12) ◽  
pp. 124518 ◽  
Author(s):  
S. Sönmezoğlu ◽  
Ö. Ateş Sönmezoğlu ◽  
G. Çankaya ◽  
A. Yıldırım ◽  
N. Serin
Keyword(s):  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode

2011 ◽  
Vol 50 (1S2) ◽  
pp. 01BG02 ◽  
Author(s):  
Tomohiko Yamakami ◽  
Shinichiro Suzuki ◽  
Mitsunori Henmi ◽  
Yusuke Murata ◽  
Rinpei Hayashibe ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Semiconductor Diode ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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