Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon on (100) Silicon: II . Carbon Incorporation info Layers and at Interfaces of Multilayer Structures

1995 ◽  
Vol 142 (11) ◽  
pp. 3970-3974
Author(s):  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Katherine E. Violette ◽  
C. Archie Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Epitaxial Silicon ◽  
Carbon Incorporation ◽  
Thermal Chemical Vapor Deposition

Formation of Raised Source/Drain Junctions by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 387 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Selective Deposition ◽  
Thermal Chemical Vapor Deposition ◽  
Solid Diffusion ◽  
Diffusion Source

AbstractIn this paper, we present alternative uses of rapid thermal chemical vapor deposition (RTCVD) in forming junctions for the raised source/drain MOSFET. The results will include applications of epitaxial silicon, SixGe1−x and TiSi2 all selectively deposited in dedicated coldwalled, lamp heated high or ultra high vacuum RTCVD reactors. Two general approaches will be considered : 1) ultra shallow junction formation in silicon followed by a selective deposition process to form a raised contact, 2) selective deposition to obtain a layer that can be used as a solid diffusion source and as a sacrificial layer for self-aligned silicide formation. In the first approach, junctions are formed typically by low energy ion-implantation. In this paper, we present rapid thermal vapor phase doping (RTVPD) as an alternative to ion-implantation to form defect free ultra-shallow junctions in Si. The method involves exposing a silicon wafer to a dopant gas (such as B2H6) at a moderate temperature (∼600°C) for a short time and subsequent annealing for drive-in. This is followed by either selective epitaxy and conventional self-aligned TiSi2 formation or selective deposition of a low-resistivity C54 TiSi2 from TiCl4 and SiH4. In the second approach, first, a semiconductor (Si, polysilicon or SixGe1−x) is deposited selectively. If the material is undoped, doping can be achieved by ion-implantation. In-situ doping is also possible as will be shown with p- and n-type SixGe1−x at temperatures as low as 625°C using B2H6 or PH3. The doped layer is then used as a solid diffusion source to form the junctions by out-diffusion. Using these different approaches, we present examples of high quality junctions in Si as shallow as a few hundred angstroms. The techniques are compared based upon their robustness, complexity, equipment and thermal budget requirements.

Rapid Thermal Chemical Vapor Deposition: Selective Epitaxial Silicon Growth (SEG)

1990 ◽  
Vol 198 ◽  
Author(s):  
J. W. Osenbach ◽  
Y. H. Ku ◽  
A. Kermani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Great Promise ◽  
Epitaxial Silicon ◽  
Crystal Silicon ◽  
Active Device ◽  
Thermal Chemical Vapor Deposition ◽  
Abrupt Interface

ABSTRACTRapid Thermal Chemical Vapor Deposition (RTCVD) offers great promise for deposition of high-quality, thin, abrupt interface epitaxial films. In addition, RTCVD systems operate under cold wall environment to minimize particles and cross contamination. SEG of silicon provides both isolation and active device wells with fine dimensional control. A combination of RTCVD and SEG holds great promise for future VLSI circuit technologies. In this paper, we present our results on selective growth of single crystal silicon using RTCVD.

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