Rapid Thermal Chemical Vapor Deposition: Selective Epitaxial Silicon Growth (SEG)

1990 ◽  
Vol 198 ◽  
Author(s):  
J. W. Osenbach ◽  
Y. H. Ku ◽  
A. Kermani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Great Promise ◽  
Epitaxial Silicon ◽  
Crystal Silicon ◽  
Active Device ◽  
Thermal Chemical Vapor Deposition ◽  
Abrupt Interface

ABSTRACTRapid Thermal Chemical Vapor Deposition (RTCVD) offers great promise for deposition of high-quality, thin, abrupt interface epitaxial films. In addition, RTCVD systems operate under cold wall environment to minimize particles and cross contamination. SEG of silicon provides both isolation and active device wells with fine dimensional control. A combination of RTCVD and SEG holds great promise for future VLSI circuit technologies. In this paper, we present our results on selective growth of single crystal silicon using RTCVD.

Silicon Carbide Structures Prepared by Rapid Thermal Chemical Vapor Deposition

1989 ◽  
Vol 146 ◽  
Author(s):  
J.L. Crowley ◽  
J.C. Liao ◽  
P.H. Kleins ◽  
G.J. Campisi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Optical Phonon ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Longitudinal Optical Phonon ◽  
Crystal Silicon ◽  
Thermal Chemical Vapor Deposition

ABSTRACTThe deposition of beta Silicon Carbide unto single crystal silicon (100) wafers using rapid thermal chemical vapor deposition (RTCVD) has been carried out using silane and ethylene as the source gases. Deposition temperatures were varid from 1100°C to 1300°C. Auger analysis revealed the silicon carbide films to be stoichiometric at all temperatures. Infrared spectroscopy data taken between 1200 cm−1 and 60° Cm−1 show the appearance of the longitudinal optical phonon at 974 cm−1 and the transverse optical phonon at 794 cm−1 in samples deposited at 1200°C and above. Stress in the films deposited on the single crystal silicon substrates is seen to go from zero or slightly compressive at 11O0°C to strongly tensile at 1300°C.

Formation of Raised Source/Drain Junctions by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 387 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Selective Deposition ◽  
Thermal Chemical Vapor Deposition ◽  
Solid Diffusion ◽  
Diffusion Source

AbstractIn this paper, we present alternative uses of rapid thermal chemical vapor deposition (RTCVD) in forming junctions for the raised source/drain MOSFET. The results will include applications of epitaxial silicon, SixGe1−x and TiSi2 all selectively deposited in dedicated coldwalled, lamp heated high or ultra high vacuum RTCVD reactors. Two general approaches will be considered : 1) ultra shallow junction formation in silicon followed by a selective deposition process to form a raised contact, 2) selective deposition to obtain a layer that can be used as a solid diffusion source and as a sacrificial layer for self-aligned silicide formation. In the first approach, junctions are formed typically by low energy ion-implantation. In this paper, we present rapid thermal vapor phase doping (RTVPD) as an alternative to ion-implantation to form defect free ultra-shallow junctions in Si. The method involves exposing a silicon wafer to a dopant gas (such as B2H6) at a moderate temperature (∼600°C) for a short time and subsequent annealing for drive-in. This is followed by either selective epitaxy and conventional self-aligned TiSi2 formation or selective deposition of a low-resistivity C54 TiSi2 from TiCl4 and SiH4. In the second approach, first, a semiconductor (Si, polysilicon or SixGe1−x) is deposited selectively. If the material is undoped, doping can be achieved by ion-implantation. In-situ doping is also possible as will be shown with p- and n-type SixGe1−x at temperatures as low as 625°C using B2H6 or PH3. The doped layer is then used as a solid diffusion source to form the junctions by out-diffusion. Using these different approaches, we present examples of high quality junctions in Si as shallow as a few hundred angstroms. The techniques are compared based upon their robustness, complexity, equipment and thermal budget requirements.

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

1988 ◽  
Vol 131 ◽  
Author(s):  
Wei Lee ◽  
Leonard V. Interrante ◽  
Corrina Czekaj ◽  
John Hudson ◽  
Klaus Lenz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Organometallic Precursor ◽  
Pressure Chemical ◽  
By Products

ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

1994 ◽  
Vol 9 (9) ◽  
pp. 2341-2348 ◽  
Author(s):  
K.J. Grannen ◽  
F. Xiong ◽  
R.P.H. Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Crystal Silicon ◽  
Microscopy Imaging ◽  
Crystalline Films

Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the α and β phases. Scanning electron microscopy imaging indicates β-Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.

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