Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

1995 ◽  
Vol 66 (10) ◽  
pp. 1255-1257 ◽  
Author(s):  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Katherine E. Violette ◽  
Gari Harris ◽  
C. Archie Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Thermal Budget ◽  
Chemical Vapor Deposition Reactor ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Epitaxy ◽  
Low Thermal Budget

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

Improvement of crystallinity of epitaxial Si1−xGex films with SiH4 treatment in in-situ rapid thermal chemical vapor deposition

1992 ◽  
Vol 60-61 ◽  
pp. 597-601
Author(s):  
Kinya Ashikaga ◽  
Morifumi Ohno ◽  
Toshiyuki Nakamura ◽  
Hisashi Fukuda ◽  
Seigo Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Chemical Vapor Deposition Reactor ◽  
Thick Layers

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

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