Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

1994 ◽  
Vol 141 (11) ◽  
pp. 3269-3273 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Selective Epitaxy ◽  
Chemical Vapor Deposition Reactor ◽  
Thermal Chemical Vapor Deposition

Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 5046-5047 ◽  
Author(s):  
Taisuke Furukawa ◽  
Takumi Nakahata ◽  
Shigemitsu Maruno ◽  
Yasunori Tokuda ◽  
Shinichi Satoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Selective Epitaxy
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