Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane: Rapid Thermal Chemical Vapor Deposition of Very Smooth Silicon at High Deposition Rates

1996 ◽  
Vol 143 (2) ◽  
pp. 649-657 ◽  
Author(s):  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Kim N. Christensen ◽  
Dennis M. Maher
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition

Effects of Ethylene/Nitrogen Mixtures on Thermal Chemical Vapor Deposition Rates and Microstructures of Carbon Films

2012 ◽  
Vol 159 (6) ◽  
pp. D367-D374 ◽  
Author(s):  
Liang-Hsun Lai ◽  
Ke-Jie Huang ◽  
Sham-Tsong Shiue ◽  
Jing-Tang Chang ◽  
Ju-Liang He
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition

Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen

1993 ◽  
Vol 334 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Strong Dependence ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition

AbstractSilicon nucleation on silicon dioxide and selective silicon epitaxial growth (SEG) were studied in an ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. Experiments were performed using 10% Si2H6 in H2 in a pressure range of 10 - 100 mTorr at 760°C. Under these conditions, the growth rate ranged from 75 to 330 nm/minute. Loss of selectivity via Si island formation on SiO2 was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealing a strong dependence on deposition pressure. Cross sectional transmission electron microscopy (XTEM) was employed to study the vertical oxide/epitaxy interface where faceting can occur. The incubation time for nucleation was found to increase from 10s to 70s as pressure is reduced from 100 mTorr to 10 mTorr, allowing thicker selective epitaxial film growth in spite of the reduced growth rates. This was attributed to the reduction in gas phase supersaturation of the Si containing species resulting in a lower density of adsorbed atoms on the SiO2 surface. This process shows a potential for chlorine free selective epitaxial growth and provides insight to the surface morphology of polycrystalline films deposited at low pressures.

scholarly journals Numerical Analysis of Deposition Rates of Zirconium Thin Films by Thermal Chemical Vapor Deposition

1992 ◽  
Vol 100 (1159) ◽  
pp. 266-271
Author(s):  
Shizuo NAKAMURA ◽  
Yoshishige HAYASHI ◽  
Takuya KAWANISHI ◽  
Toshiteru KOMATSU ◽  
Masashi TAKEUCHI
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Numerical Analysis ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition
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