Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

V. Z-Q Li; M. R. Mirabedini; R. T. Kuehn; J. J. Wortman; M. C. Öztürk; D. Batchelor; K. Christensen; D. M. Maher

doi:10.1063/1.120344

Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

Applied Physics Letters ◽

10.1063/1.120344 ◽

1997 ◽

Vol 71 (23) ◽

pp. 3388-3390 ◽

Cited By ~ 7

Author(s):

V. Z-Q Li ◽

M. R. Mirabedini ◽

R. T. Kuehn ◽

J. J. Wortman ◽

M. C. Öztürk ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition

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Thin oxynitride film metal‐oxide‐semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110067 ◽

1993 ◽

Vol 63 (26) ◽

pp. 3619-3621 ◽

Cited By ~ 11

Author(s):

P. K. McLarty ◽

W. L. Hill ◽

X.‐L. Xu ◽

V. Misra ◽

J. J. Wortman ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition ◽

Oxynitride Film

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On the mobility of n‐channel metal–oxide–semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114149 ◽

1995 ◽

Vol 66 (1) ◽

pp. 73-75 ◽

Cited By ~ 2

Author(s):

P. K. McLarty ◽

V. Misra ◽

W. Hill ◽

J. J. Wortman ◽

J. R. Hauser ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition

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P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

High Vacuum ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

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A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process

Journal of The Electrochemical Society ◽

10.1149/1.1837387 ◽

1997 ◽

Vol 144 (1) ◽

pp. 214-217 ◽

Cited By ~ 8

Author(s):

Wen‐Kuan Yeh ◽

Yeu‐Cherng Shiau ◽

Mao‐Chieh Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposition Process ◽

Metal Oxide Semiconductor Capacitor ◽

Vapor Deposition Process

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ChemInform Abstract: Preparation of Device-Quality SiO2 Thin Films by Remote Plasma- Enhanced Chemical Vapor Deposition (PECVD): Applications in Metal- Oxide-Semiconductor (MOS) Devices

ChemInform ◽

10.1002/chin.199636322 ◽

2010 ◽

Vol 27 (36) ◽

pp. no-no

Author(s):

G. LUCOVSKY

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Mos Devices

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Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.2001757 ◽

2005 ◽

Vol 87 (5) ◽

pp. 051922 ◽

Cited By ~ 105

Author(s):

N. Lu ◽

W. Bai ◽

A. Ramirez ◽

C. Mouli ◽

A. Ritenour ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Compositional and electrical properties of InSb metal oxide semiconductor structure fabricated by photo-chemical vapor deposition

Vacuum ◽

10.1016/0042-207x(91)91335-l ◽

1991 ◽

Vol 42 (16) ◽

pp. 1060-1061

Author(s):

CJ Huang ◽

YK Su ◽

RL Leu

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

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$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.476 ◽

1995 ◽

Vol 34 (Part 1, No. 2A) ◽

pp. 476-481 ◽

Cited By ~ 2

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Chih-Jen Hwang ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Deuterium Lamp

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Effect of Using Chemical Vapor Deposition WSi[sub 2] and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors

Electrochemical and Solid-State Letters ◽

10.1149/1.3460300 ◽

2010 ◽

Vol 13 (9) ◽

pp. H328 ◽

Cited By ~ 2

Author(s):

B. S. Ong ◽

K. L. Pey ◽

C. Y. Ong ◽

C. S. Tan ◽

C. L. Gan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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ChemInform Abstract: A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process.

ChemInform ◽

10.1002/chin.199720232 ◽

2010 ◽

Vol 28 (20) ◽

pp. no-no

Author(s):

W.-K. YEH ◽

Y.-C. SHIAU ◽

M.-C. CHEN

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposition Process ◽

Metal Oxide Semiconductor Capacitor ◽

Vapor Deposition Process

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