scholarly journals Numerical Analysis of Deposition Rates of Zirconium Thin Films by Thermal Chemical Vapor Deposition

1992 ◽  
Vol 100 (1159) ◽  
pp. 266-271
Author(s):  
Shizuo NAKAMURA ◽  
Yoshishige HAYASHI ◽  
Takuya KAWANISHI ◽  
Toshiteru KOMATSU ◽  
Masashi TAKEUCHI
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Numerical Analysis ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition

scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Deposition and Characterization of Metalorganic Chemical Vapor Deposition ZrO2 Thin Films Using Zr(Thd)4

1991 ◽  
Vol 250 ◽  
Author(s):  
Jie Si ◽  
Chien H. Peng ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Crystal Silicon ◽  
Deposition Rates ◽  
Deposited Films ◽  
Metalorganic Chemical

AbstractExcellent quality ZrO2 thin films were successfully deposited on single crystal silicon wafers by metalorganic chemical vapor deposition (MOCVD) at reduced pressures using tetrakis(2,2,6,6—tetramethyl—3,5—heptanedionato) zirconium, [Zr(thd)4]. For substrate temperatures below 530°C, the film deposition rates were very small (≤ 1 nm/min). The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As—deposited films are stoichiometric (Zr/O = 1/2) and carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as—deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post—deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, are reported. The measured value of the dielectric constant of the as—deposited ZrO2 films is around 19 in the frequency range of 5 kHz to 1000 kHz.

Effects of Ethylene/Nitrogen Mixtures on Thermal Chemical Vapor Deposition Rates and Microstructures of Carbon Films

2012 ◽  
Vol 159 (6) ◽  
pp. D367-D374 ◽  
Author(s):  
Liang-Hsun Lai ◽  
Ke-Jie Huang ◽  
Sham-Tsong Shiue ◽  
Jing-Tang Chang ◽  
Ju-Liang He
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition
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