scholarly journals Characterization of Deposition Process, Microstructure and Interfacial States of Silicon Dioxide Film Using Tetraethylorthosilicate/O[sub 2] with Various Dilution Gases

2001 ◽  
Vol 148 (10) ◽  
pp. C679 ◽  
Author(s):  
Chung Yi ◽  
Hyo Uk Kim ◽  
Shi Woo Rhee
Keyword(s):  
Silicon Dioxide ◽  
Deposition Process ◽  
Silicon Dioxide Film ◽  
Interfacial States ◽  
Dioxide Film

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film

Characterization of fluorine-doped silicon dioxide film by Raman spectroscopy

1997 ◽  
Vol 310 (1-2) ◽  
pp. 167-170 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Iwagami ◽  
N. Morita ◽  
T. Matsunobe ◽  
H. Ishida
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Dioxide ◽  
Silicon Dioxide Film ◽  
Doped Silicon ◽  
Dioxide Film

Preparation and characterization of hydrophilic silicon dioxide film on acrylate polyurethane coatings with self-cleaning ability

2015 ◽  
Vol 349 ◽  
pp. 916-923 ◽  
Author(s):  
Xin Yang ◽  
Liqun Zhu ◽  
Yichi Chen ◽  
Baiqing Bao ◽  
Jinlong Xu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Film ◽  
Polyurethane Coatings ◽  
Self Cleaning ◽  
Dioxide Film

Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film

2018 ◽  
Vol 655 ◽  
pp. 22-26 ◽  
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Silicon Dioxide ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon Dioxide Film ◽  
Beam Production ◽  
Dioxide Film

Measurements for the Moisture Permeations and Thermal Resistances of Cyclo Olefin Copolymer Substrates Deposited a Silicon Dioxide Film

2008 ◽  
Author(s):  
Rong-Yuan Jou
Keyword(s):  
Thermal Resistance ◽  
Silicon Dioxide ◽  
Diffusion Barrier ◽  
Moisture Diffusion ◽  
Permeation Rate ◽  
Test Method ◽  
Thermal Barrier ◽  
Silicon Dioxide Film ◽  
Plastic Substrates ◽  
Dioxide Film

Plastic substrates for organic light-emitting devices (OLED) are extremely sensitive to moisture and oxygen. A new amorphous engineering thermoplastic, nominated cyclic olefin copolymer (COC) has been used for this application, because of higher transparence, lower birefringence, lower dispersion and lower water absorption. However, COC plastic substrates can’t sustain plasma-based processing temperatures at 350°C. In this study, experiments of the moisture permeation rate testing and the thermal resistance experiments are conducted to explore the moisture diffusion barrier and thermal barrier characteristics of COC substrate deposited a SiO2 thin film on it. Silicon dioxide layer of thickness, 0.25μm, 0.5μm, and 1 μm, respectively, are fabricated by PECVD. For the permeation rate measurement, the Ca-test method is adopted. For the thermal resistance measurements, two methods of the thermocouple in vacuum environment and the IR thermography are adopted and measured results are compared. Different surface temperatures, 323.15K, 373.15K, 408.15K, and 473.15K, respectively, are applied upon the silicon dioxide film and temperature differences for varied thickness of silicon dioxide film are measured. Experimental results are presented to investigate the behaviors of moisture diffusion barrier and thermal barrier characteristics of the COC/SiO2 structure.

Characteristics of thermally nitrided silicon dioxide film and plasma enhancement

1984 ◽  
Vol 13 (6) ◽  
pp. 913-929 ◽  
Author(s):  
I. Kato ◽  
T. Ito ◽  
T. Nakamura ◽  
H. Ishikawa
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Film ◽  
Plasma Enhancement ◽  
Dioxide Film
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