scholarly journals Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition

1999 ◽  
Vol 86 (3) ◽  
pp. 1346-1354 ◽  
Author(s):  
Young-Bae Park ◽  
Shi-Woo Rhee
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Dioxide Film ◽  
Interfacial States ◽  
Dioxide Film

Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition

2008 ◽  
Vol 47 (12) ◽  
pp. 8905-8908
Author(s):  
Young Im ◽  
Jung Hee Lee ◽  
Youn-Seoung Lee ◽  
Won-Jun Lee ◽  
Sa-Kyun Rha
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Neutral Beam ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

2012 ◽  
Vol 111 (3) ◽  
pp. 034101 ◽  
Author(s):  
Kazumasa Kawase ◽  
Akinobu Teramoto ◽  
Hiroshi Umeda ◽  
Tomoyuki Suwa ◽  
Yasushi Uehara ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxygen Radical ◽  
Silicon Dioxide Film ◽  
Radical Oxidation ◽  
Dioxide Film

Unexpected Penetration of AuGe/Pt Metal into a Interface Between a Atmospheric Chemical Vapor Deposition Silicon Dioxide Film and GaAs Wafer Surface

1993 ◽  
Vol 300 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Ohmic Contact ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wafer Surface ◽  
Gaas Crystal ◽  
Silicon Dioxide Film ◽  
Catalytic Metal ◽  
Dioxide Film

ABSTRACTIt was observed that thin metal (catalytic metal: platinum) penetrated into a interface between a chemical vapor deposition (CVD) silicon dioxide film and a Si–implanted electric thermal furnace, on the way to carrying out experiments on alloyed ohmic–metals with Si–implanted electrically conductive n–type GaAs crystal layers in order to obtain stable and uniform ohmic contact electrodes of low specific ohmic contact resistances for metal–semiconductor field–effect–transistor arrays as a observation tool of semi–insulating GaAs–crystal crystallographic uniformity.

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