The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD

2011 ◽  
Author(s):  
S. L. Li ◽  
H. Wang ◽  
J. Zhang ◽  
Y.-Y. Fang ◽  
W. Fan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
H. Shimawaki ◽  
Y. Kato ◽  
A. Usui
Keyword(s):  
Growth Factor ◽  
Growth Temperature ◽  
Growth Rates ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Superlattice Structures ◽  
Inp Substrates

AbstractInAs chloride ALE has been carried out in detail, resulting in successful InGaAs ALE on (111)B InP substrates. InAs growth of 0.9 ML/cycle is obtained for (111)B InAs substrates at temperatures below 375 °C, while growth rates for (100) and (111)A substrates steadily decrease with increases in growth temperature. The growth rates are independent of InCI pressure at 375 °C, suggesting a self-limiting growth factor in InAs chloride ALE. (GaAs)1(InAs)1 and (GaAs)2(InAs)2 superalloys can be prepared on (111)B InP substrates at 375 °C. Growth rates and crystal compositions for both layers agree well with the values expected for ideal superalloys. The presence of superlattice structures is indicated by X-ray diffraction measurement,

Atomic Layer Epitaxy of GaAs on Ge Substrates

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Ramdani ◽  
B.T. Mcdermott ◽  
S.M. Bedair
Keyword(s):  
Low Temperature ◽  
Growth Temperature ◽  
Adsorption Process ◽  
Substantial Reduction ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Low Temperature Deposition ◽  
Temperature Deposition

AbstractWe report on the low temperature growth of GaAs on Ge substrates using Atomic Layer Epitaxy. Low temperature deposition has resulted in substantial reduction of the outdiffusion of Ge into the GaAs epilayer as being indicated from SIMS. The I-V characteristics of the GaAs/Ge heterojunction were thyristor like or near abrupt depending on the growth temperature. We also report on the use of the Atomic Layer Epitaxy self-limiting adsorption process of TMGa to control the diffusion of Ga into Ge substrates at the monolayer level.

Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4011-4015 ◽  
Author(s):  
Masahiro Ishida ◽  
Mitsutomi Yamashita ◽  
Yoshio Nagata ◽  
Yoshiyuki Suda
Keyword(s):  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Temperature Window

Ordered Ternary Alloys by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
B.T. Mcdermott ◽  
K.G. Reid ◽  
A. Dip ◽  
N.A. El-Masry ◽  
S.M. Bed Air ◽  
...  
Keyword(s):  
Gas Phase ◽  
Growth Temperature ◽  
Gaas Substrate ◽  
Atomic Layer ◽  
Ternary Alloys ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Gaas Substrates

AbstractWe report on the successful growth of GalnP on GaAs substrate by Atomic Layer Epitaxy using organometallic and hydride sources. Growth was achieved by sequential exposure of the substrate to TMGa, PH3, TEIn and PH3. X-ray diffraction showed compositional lattice-matching optimally at 550°C with arbitrary choices of the mole fractions of the precursors in the gas phase. TEM also confirmed the highest ordering at this growth temperature on (100) substrates. Uniformity was excellent using Atomic Layer Epitaxy. Growth on (111)A GaAs substrates produced no evidence of the ordered CuPt phase present on (100) substrates.

A Possibility of ALE Growth of InN by using InCl3

1991 ◽  
Vol 222 ◽  
Author(s):  
Kazuhito Higuchi ◽  
Akio Unno ◽  
Tadashi Shiraishi
Keyword(s):  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
Inert Gas ◽  
Atomic Layer Epitaxy ◽  
Structural Defects ◽  
Carrier Gas ◽  
Temperature Range

ABSTRACTA possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy

2000 ◽  
Vol 618 ◽  
Author(s):  
Keiji Ikeda ◽  
Jiro Yanase ◽  
Satoshi Sugahara ◽  
Masakiyo Matsumura
Keyword(s):  
Thermal Stability ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Ion Scattering ◽  
Axial Impact ◽  
Ion Scattering Spectroscopy ◽  
Thermal Stability Of

ABSTRACTThermal stability has been evaluated for ALE-grown Si/Ge interfaces by co-axial impact collision ion scattering spectroscopy. The IML-thick Si layer on Ge was stable only at less than 360°C. The 2ML-thick Si layer on Ge, however, was stable up to 550°C, and Si layers could be also ALE-grown successively on the 2ML-thick Si layer on Ge, while keeping the interface abrupt, since the Si-ALE growth temperature was about 530°C.

Atomic Layer Epitaxy of GaAs and InAs

1989 ◽  
Vol 145 ◽  
Author(s):  
Weon G. Jeong ◽  
E.P. Menu ◽  
P.D. Dapkus
Keyword(s):  
Growth Rate ◽  
Exposure Time ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Short Exposure ◽  
Physical Size ◽  
A Value ◽  
Decomposition Time

AbstractThe saturation behavior of growth of GaAs and InAs by atomic layer epitaxy is studied. The growth rate is found to be strongly dependent on alkyl exposure time for the same total alkyl exposure per cycle. The longer the exposure time, the higher the saturated growth rate is. For short exposure, the growth rate saturates to a value less than one monolayer (ML)/cycle. Strong saturation of the growth rate to one ML/cycle is achieved for InAs at a growth temperature of 340°C with 3 sec of trimethylindium exposure. For GaAs, saturation of the growth rate to one ML/cycle is achieved at the growth temperature of 400°C with 10 sec of trimethylgallium exposure. At higher growth temperatures, the growth rate does not saturate but increases slowly with increasing exposure. The large physical size and finite decomposition time of the initial adsorbate are suggested as the cause for the dependence of ALE growth rate on alkyl exposure time.

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