A Possibility of ALE Growth of InN by using InCl3

1991 ◽  
Vol 222 ◽  
Author(s):  
Kazuhito Higuchi ◽  
Akio Unno ◽  
Tadashi Shiraishi
Keyword(s):  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
Inert Gas ◽  
Atomic Layer Epitaxy ◽  
Structural Defects ◽  
Carrier Gas ◽  
Temperature Range

ABSTRACTA possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
High Thermal Stability ◽  
Atomic Layer Epitaxy ◽  
Quantum Well Structures ◽  
Temperature Range ◽  
Short Period ◽  
Thermal Stability Of

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

Atomic layer epitaxy of GaAs using nitrogen carrier gas

1991 ◽  
Vol 59 (17) ◽  
pp. 2148-2149 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Gas

Impurity and Stoichiometry Control in Atomic Layer Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
H. Yokoyama ◽  
K. Ikuta ◽  
N. Inoue
Keyword(s):  
Point Defects ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Defect Density ◽  
Atomic Layer ◽  
Negative Resistance ◽  
Atomic Layer Epitaxy ◽  
Tunneling Diode ◽  
Order Of Magnitude ◽  
Stoichiometry Control

ABSTRACTWe investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.

OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1667-1670 ◽  
Author(s):  
M. GARCÍA-ROCHA ◽  
I. HERNÁNDEZ-CALDERÓN
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Diffusion Length ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD

2011 ◽  
Author(s):  
S. L. Li ◽  
H. Wang ◽  
J. Zhang ◽  
Y.-Y. Fang ◽  
W. Fan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
H. Shimawaki ◽  
Y. Kato ◽  
A. Usui
Keyword(s):  
Growth Factor ◽  
Growth Temperature ◽  
Growth Rates ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Superlattice Structures ◽  
Inp Substrates

AbstractInAs chloride ALE has been carried out in detail, resulting in successful InGaAs ALE on (111)B InP substrates. InAs growth of 0.9 ML/cycle is obtained for (111)B InAs substrates at temperatures below 375 °C, while growth rates for (100) and (111)A substrates steadily decrease with increases in growth temperature. The growth rates are independent of InCI pressure at 375 °C, suggesting a self-limiting growth factor in InAs chloride ALE. (GaAs)1(InAs)1 and (GaAs)2(InAs)2 superalloys can be prepared on (111)B InP substrates at 375 °C. Growth rates and crystal compositions for both layers agree well with the values expected for ideal superalloys. The presence of superlattice structures is indicated by X-ray diffraction measurement,

Atomic Layer Epitaxy of GaAs on Ge Substrates

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Ramdani ◽  
B.T. Mcdermott ◽  
S.M. Bedair
Keyword(s):  
Low Temperature ◽  
Growth Temperature ◽  
Adsorption Process ◽  
Substantial Reduction ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Low Temperature Deposition ◽  
Temperature Deposition

AbstractWe report on the low temperature growth of GaAs on Ge substrates using Atomic Layer Epitaxy. Low temperature deposition has resulted in substantial reduction of the outdiffusion of Ge into the GaAs epilayer as being indicated from SIMS. The I-V characteristics of the GaAs/Ge heterojunction were thyristor like or near abrupt depending on the growth temperature. We also report on the use of the Atomic Layer Epitaxy self-limiting adsorption process of TMGa to control the diffusion of Ga into Ge substrates at the monolayer level.

In SituObservation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1277-L1280 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Minoru Yagi ◽  
Akinori Koukitu ◽  
Hisashi Seki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Gas ◽  
Gas System ◽  
Inert Carrier
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