InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
H. Shimawaki ◽  
Y. Kato ◽  
A. Usui
Keyword(s):  
Growth Factor ◽  
Growth Temperature ◽  
Growth Rates ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Superlattice Structures ◽  
Inp Substrates

AbstractInAs chloride ALE has been carried out in detail, resulting in successful InGaAs ALE on (111)B InP substrates. InAs growth of 0.9 ML/cycle is obtained for (111)B InAs substrates at temperatures below 375 °C, while growth rates for (100) and (111)A substrates steadily decrease with increases in growth temperature. The growth rates are independent of InCI pressure at 375 °C, suggesting a self-limiting growth factor in InAs chloride ALE. (GaAs)1(InAs)1 and (GaAs)2(InAs)2 superalloys can be prepared on (111)B InP substrates at 375 °C. Growth rates and crystal compositions for both layers agree well with the values expected for ideal superalloys. The presence of superlattice structures is indicated by X-ray diffraction measurement,

Ordered Ternary Alloys by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
B.T. Mcdermott ◽  
K.G. Reid ◽  
A. Dip ◽  
N.A. El-Masry ◽  
S.M. Bed Air ◽  
...  
Keyword(s):  
Gas Phase ◽  
Growth Temperature ◽  
Gaas Substrate ◽  
Atomic Layer ◽  
Ternary Alloys ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Gaas Substrates

AbstractWe report on the successful growth of GalnP on GaAs substrate by Atomic Layer Epitaxy using organometallic and hydride sources. Growth was achieved by sequential exposure of the substrate to TMGa, PH3, TEIn and PH3. X-ray diffraction showed compositional lattice-matching optimally at 550°C with arbitrary choices of the mole fractions of the precursors in the gas phase. TEM also confirmed the highest ordering at this growth temperature on (100) substrates. Uniformity was excellent using Atomic Layer Epitaxy. Growth on (111)A GaAs substrates produced no evidence of the ordered CuPt phase present on (100) substrates.

Electrochemical Atomic-Layer Epitaxy: Electrodeposition of III-V and II-VI Compound Semiconductors

1999 ◽  
Vol 581 ◽  
Author(s):  
Travis L. Wade ◽  
Billy H. Flowers ◽  
Raman Vaidyanathan ◽  
Kenneth Mathe ◽  
Clinton B. Maddox ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Infrared Reflection ◽  
Epitaxial Deposition ◽  
Electrochemical Atomic Layer Epitaxy

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Flows ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.

Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

2002 ◽  
Vol 744 ◽  
Author(s):  
Raman Vaidyanathan ◽  
Mkhulu K. Mathe ◽  
Patrick Sprinkle ◽  
Steve M Cox ◽  
Uwe Happek ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Atomic Layer Epitaxy ◽  
Cyclic Voltammograms ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochemical Atomic Layer Epitaxy ◽  
Absorption Measurements

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.We report the formation of compound Cu2Se, at room temperature by electrochemical atomic layer epitaxy (EC-ALE). Cyclic voltammograms were used to determine the deposition potentials of each element. An automated deposition program was used to form 750 cycles of Cu2Se thin films. Electron probe microanalysis was done to determine the stoichiometry of the thin films. X-ray diffraction of the 200 cycle deposit indicated the presence of polycrystalline Cu2Se. The atomic ratio of Cu/Se in the thin films was found to be 2. Band gap of the thin films were determined by reflection absorption measurements. The band gap of the 200 cycle Cu2Se films was found to be 1.6 eV. X-ray diffraction of 350 and 750 cycle Cu2Se films, indicated the deposits consisted of Cu3Se2 and Cu2Se.

X-ray diffraction study of thin electroluminescent ZnS films grown by atomic layer epitaxy

1981 ◽  
Vol 67 (2) ◽  
pp. 573-583 ◽  
Author(s):  
V.-P. Tanninen ◽  
M. Oikkonen ◽  
T. O. Tuomi
Keyword(s):  
Diffraction Study ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zns Films

X-ray diffraction study of microstructure in ZnS thin films grown from zinc acetate by atomic layer epitaxy

1985 ◽  
Vol 124 (3-4) ◽  
pp. 317-321 ◽  
Author(s):  
M. Oikkonen ◽  
M. Blomberg ◽  
T. Tuomi ◽  
M. Tammenmaa
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Zinc Acetate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Electron Microscopy and X‐Ray Diffraction Characterization of InP / GaAs Grown by Atomic Layer Epitaxy

1993 ◽  
Vol 140 (6) ◽  
pp. 1776-1779 ◽  
Author(s):  
L. Lazzarini ◽  
P. Franzosi ◽  
C. E. Norman ◽  
G. Salviati ◽  
D. Bertone
Keyword(s):  
Electron Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

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