Facile ex situ NaF size/morphology tuning strategy for highly monodisperse sub-5 nm β-NaGdF4:Yb/Er

A facile ex situ NaF size/morphology tuning strategy for NaF release rate regulation was presented and successfully used to achieve time-saving controlled solvothermal synthesis of highly monodisperse/crystalline sub-5 nm β-NaGdF4:Yb/Er at a high growth temperature of 300 °C.

Filling of Deep Trench by Epitaxial SiC Growth

We performed deep trench filling by using epitaxial SiC growth. It was found that the trench filling condition depend on trench width. A high growth temperature was needed to fill a narrow trench and a low growth temperature was needed to fill a wide trench structure. We optimized the filling condition and successfully filled 7μ m deep and 2 μm wide trench without void formation. We also investigated the 2D doping distribution of the filled area by SSRM. As a result, it is found that the existence of a sub-trench was related to the generation of a doping distribution in the filled area. The trench filling mechanism and doping distribution are discussed.

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.