Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy

2000 ◽  
Vol 618 ◽  
Author(s):  
Keiji Ikeda ◽  
Jiro Yanase ◽  
Satoshi Sugahara ◽  
Masakiyo Matsumura
Keyword(s):  
Thermal Stability ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Ion Scattering ◽  
Axial Impact ◽  
Ion Scattering Spectroscopy ◽  
Thermal Stability Of

ABSTRACTThermal stability has been evaluated for ALE-grown Si/Ge interfaces by co-axial impact collision ion scattering spectroscopy. The IML-thick Si layer on Ge was stable only at less than 360°C. The 2ML-thick Si layer on Ge, however, was stable up to 550°C, and Si layers could be also ALE-grown successively on the 2ML-thick Si layer on Ge, while keeping the interface abrupt, since the Si-ALE growth temperature was about 530°C.

In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots

2004 ◽  
Vol 839 ◽  
Author(s):  
H. S. Kim ◽  
J. H. Suh ◽  
C. G. Park ◽  
S. J. Lee ◽  
S. K. Noh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Quantum Dots ◽  
Early Stage ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Atomic Layer Epitaxy ◽  
Average Height ◽  
In Situ Heating ◽  
Thermal Stability Of

ABSTRACTSelf-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy technique and the structure and the thermal stability of QDs have been studied by using high resolution electron microscopy with in-situ heating experiment capability. The QDs were found to form a hemispherical structure with {136} side facet in the early stage of growth. The average height and diameter of the QD were found to be ∼ 5.5 nm and ∼ 23 nm, respectively. Upon capping by GaAs layer, however, the apex structure of QD changed to a flat one. In-situ heating experiment within TEM revealed that the uncapped QD remained stable until 580°C. However, at temperature above 600°C, the QD structure became flat due to the fast decrease of QD height. After flattening, the atoms diffused from the InAs QD to the GaAs substrate, resulting in the total collapse. The density of the QD decreased abruptly by this collapse and most QDs disappeared at above 600°C.

Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
High Thermal Stability ◽  
Atomic Layer Epitaxy ◽  
Quantum Well Structures ◽  
Temperature Range ◽  
Short Period ◽  
Thermal Stability Of

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy

2005 ◽  
Vol 285 (1-2) ◽  
pp. 137-145 ◽  
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Thermal Stability Of

Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2226-2229 ◽  
Author(s):  
Tae Joo Park ◽  
Jeong Hwan Kim ◽  
Jae Hyuck Jang ◽  
Minha Seo ◽  
Kwang Duk Na ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Layer ◽  
Atomic Layer ◽  
Thermal Stability Of

Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

2011 ◽  
Vol 257 (16) ◽  
pp. 7305-7309 ◽  
Author(s):  
Yue Huang ◽  
Yan Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Niobium Oxide ◽  
Atomic Layer ◽  
Thermal Stability Of

Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

2021 ◽  
Author(s):  
Changyu Park ◽  
Changmin Lee ◽  
Woohui Lee ◽  
Jehoon Lee ◽  
Jinyong Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thermal Stability Of
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