Verification of compaction and rarefaction models for fused silica with 40 billion pulses of 193-nm excimer laser exposure and their effects on projection lens imaging performance

Author(s):  
J. Martin Algots ◽  
Richard Sandstrom ◽  
William Partlo ◽  
Kazuhiro Takahashi ◽  
Hiroyuki Ishii ◽  
...  
2003 ◽  
Author(s):  
J. Martin Algots ◽  
Richard Sandstrom ◽  
William N. Partlo ◽  
Petar Maroevic ◽  
Eric Eva ◽  
...  

1987 ◽  
Vol 101 ◽  
Author(s):  
I. Higashikawa ◽  
M. Nonaka ◽  
T. Sato ◽  
M. Nakase ◽  
S. Ito ◽  
...  

ABSTRACTA KrF excimer laser exposure method has been developed for laboratory use, which employs 10 to 1 achromatic projection lens of 0.37 NA and 5x5 mm field size , and a TTL alignment system using the double diffraction method, which was realized by the use,of the achromatic lens. Novolak type mid-UV resists, such as AZ-5214 and PR-1024, were best suited for use in 248 nm exposure, considering the sensitivity and etching resistance from a practical viewpoint, and an additional post exposure baking process also improved the resist profile. The dependences of the exposure characteristics on the energy density per pulse and pulse frequency of these resists were not observed in the region of the practical exposure conditions. An alignment precision of x±30-= 0.2 μm was achieved for the alignment mark consisting of poly Si pattern. Thus, a 0.3 μm line and space pattern was realized by using tri-level resist process and a 0.2 μm gate pattern was successfully fabricated on the coplanar pattern with a 0.4 μm step.


1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.


1996 ◽  
Vol 21 (24) ◽  
pp. 1960 ◽  
Author(s):  
Douglas C. Allan ◽  
Charlene Smith ◽  
N. F. Borrelli ◽  
T. P. Seward
Keyword(s):  

2011 ◽  
Author(s):  
Enamul Khan ◽  
S. C. Langford ◽  
L. A. Boatner ◽  
J. T. Dickinson

1999 ◽  
Vol 24 (1) ◽  
pp. 58 ◽  
Author(s):  
V. Liberman ◽  
M. Rothschild ◽  
J. H. C. Sedlacek ◽  
R. S. Uttaro ◽  
A. Grenville ◽  
...  

2001 ◽  
Author(s):  
Chris K. Van Peski ◽  
Zsolt Bor ◽  
Todd J. Embree ◽  
Richard G. Morton
Keyword(s):  

2000 ◽  
Author(s):  
Ying Wan ◽  
Tiechuan Zuo ◽  
Yijian Jiang

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