Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP

1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen
Keyword(s):  
Excimer Laser ◽  
Laser Frequency ◽  
Laser Exposure ◽  
Resonance Fluorescence ◽  
Thermally Activated ◽  
Ejection Process ◽  
Electronically Excited ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

scholarly journals 193-nm deep-UV lithography system using a line-narrowed ArF excimer laser

1993 ◽  
Author(s):  
Bruce W. Smith ◽  
Malcolm C. Gower ◽  
Mark Westcott ◽  
Lynn F. Fuller
Keyword(s):  
Excimer Laser ◽  
Uv Lithography ◽  
Arf Excimer Laser ◽  
Deep Uv ◽  
193 Nm ◽  
Lithography System

scholarly journals Fabrication of Superhydrophobic Silicone Rubber with Periodic Micro/Nano-Suction Cup Structure by ArF Excimer Laser-Induced Photodissociation

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 870 ◽  
Author(s):  
Masayuki Okoshi
Keyword(s):  
Excimer Laser ◽  
Silicone Rubber ◽  
Focal Point ◽  
Pulse Number ◽  
Entire Surface ◽  
Suction Cup ◽  
Atomic Force ◽  
Superhydrophobic Property ◽  
Arf Excimer Laser ◽  
193 Nm

A 193-nm ArF excimer laser was used to induce the photodissociation of Si–O bonds of silicone rubber in order to fabricate a periodic micro/nano-suction cup silicone structure, approximately 1 μm in diameter and 2 μm in height at regular intervals of 2.5 μm. The laser was focused on Al-coated silicone rubber by each silica glass microsphere 2.5 μm in diameter, which covered the entire surface of the silicone rubber. The silicone rubber underneath each microsphere photochemically swelled after laser-ablating the coated Al to limit the diameter of the swelling. Simultaneously, the coated Al was able to adjust the focal point to the surface of the silicone rubber to form a hole approximately 500 nm in diameter, centered at the swollen silicone. The dependences of the thickness of the coated-Al and the laser pulse number are discussed, based on the observations of a scanning electron microscope (SEM) and an atomic force microscope (AFM). The superhydrophobic property of the fabricated micro/nano-suction cup structure was successfully found.

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

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