Imaging projection lens for excimer laser micromachining

2000 ◽  
Author(s):  
Ying Wan ◽  
Tiechuan Zuo ◽  
Yijian Jiang
1993 ◽  
Vol 2 (1-2) ◽  
pp. 87-92 ◽  
Author(s):  
J. Ihlemann ◽  
H. Schmidt ◽  
B. Wolff-Rottke

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.


2015 ◽  
Vol 780 ◽  
pp. 29-32 ◽  
Author(s):  
M.Z. Zainol ◽  
Yufridin Wahab ◽  
H. Fazmir ◽  
A.F.M. Anuar ◽  
S. Johari ◽  
...  

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures.The objective of this study is to investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance. Parameters such as frequency, fluence and velocity were retained as constants. In this paper, we present a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the two major laser parameters (Number of laser pulses and number of laser passes) were varied. Both parameters were showing declination profile however from comparing both graphs, it showed that etch rate dropped more steeply when varied number of laser passes rather than number of pulses.


1987 ◽  
Vol 101 ◽  
Author(s):  
I. Higashikawa ◽  
M. Nonaka ◽  
T. Sato ◽  
M. Nakase ◽  
S. Ito ◽  
...  

ABSTRACTA KrF excimer laser exposure method has been developed for laboratory use, which employs 10 to 1 achromatic projection lens of 0.37 NA and 5x5 mm field size , and a TTL alignment system using the double diffraction method, which was realized by the use,of the achromatic lens. Novolak type mid-UV resists, such as AZ-5214 and PR-1024, were best suited for use in 248 nm exposure, considering the sensitivity and etching resistance from a practical viewpoint, and an additional post exposure baking process also improved the resist profile. The dependences of the exposure characteristics on the energy density per pulse and pulse frequency of these resists were not observed in the region of the practical exposure conditions. An alignment precision of x±30-= 0.2 μm was achieved for the alignment mark consisting of poly Si pattern. Thus, a 0.3 μm line and space pattern was realized by using tri-level resist process and a 0.2 μm gate pattern was successfully fabricated on the coplanar pattern with a 0.4 μm step.


1998 ◽  
Vol 127-129 ◽  
pp. 911-914 ◽  
Author(s):  
A. Braun ◽  
K. Zimmer ◽  
B. Hösselbarth ◽  
J. Meinhardt ◽  
F. Bigl ◽  
...  

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