Advanced silicon etching using high-density plasmas

1995 ◽  
Author(s):  
Jy K. Bhardwaj ◽  
Huma Ashraf
Keyword(s):  
High Density ◽  
Silicon Etching

Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2plasmas

2005 ◽  
Vol 14 (2) ◽  
pp. S42-S52 ◽  
Author(s):  
G Cunge ◽  
M Kogelschatz ◽  
O Joubert ◽  
N Sadeghi
Keyword(s):  
High Density ◽  
Silicon Etching ◽  
Wall Interactions

Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas

2001 ◽  
Vol 19 (5) ◽  
pp. 2197-2206 ◽  
Author(s):  
Steven A. Vitale ◽  
Heeyeop Chae ◽  
Herbert H. Sawin
Keyword(s):  
High Density ◽  
Silicon Etching

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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