Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas

2002 ◽  
Vol 20 (5) ◽  
pp. 2137 ◽  
Author(s):  
G. Cunge ◽  
R. L. Inglebert ◽  
O. Joubert ◽  
L. Vallier ◽  
N. Sadeghi
Keyword(s):  
Ion Flux ◽  
High Density ◽  
Silicon Etching ◽  
Flux Composition

The ion energy distributions and ion flux composition from a high power impulse magnetron sputtering discharge

2006 ◽  
Vol 515 (4) ◽  
pp. 1522-1526 ◽  
Author(s):  
J. Bohlmark ◽  
M. Lattemann ◽  
J.T. Gudmundsson ◽  
A.P. Ehiasarian ◽  
Y. Aranda Gonzalvo ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Ion Flux ◽  
Energy Distributions ◽  
Ion Energy ◽  
Flux Composition ◽  
Ion Energy Distributions

Ion flux behavior in high density plasmas

1997 ◽  
Vol 6 (2) ◽  
pp. 110-124
Author(s):  
Shao Fu-qiu ◽  
Wang Long ◽  
Wu Han-ming ◽  
Yao Xin-zi
Keyword(s):  
Ion Flux ◽  
High Density

Influence of Ion Bombardment on the Nucleation and Growth of Plasna Deposited Amorphous Silicon

1986 ◽  
Vol 75 ◽  
Author(s):  
A. M. Antoine ◽  
B. Drevillon
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Early Stage ◽  
Ion Bombardment ◽  
Nucleation And Growth ◽  
Ion Flux ◽  
High Density ◽  
Nucleation Process ◽  
Island Structure ◽  
Smooth Interface

AbstractReal-time spectroscopic phase modulated ellipsometry is used to study the influence of ion bombardment on the growth of plasma deposited amorphous silicon (a-Si:H). The influence of the relative ion flux impinging on the substrate is discussed by comparing a-Si:H films deposited in RF and multipole discharges. A nucleation process is observed in the early stage of the growth of a-Si:H deposited on chromium substrates. When the ion bombardment is strong (multipole plasma) a coalescence of the island structure is observed leading to the formation of a high density film with a smooth interface.

scholarly journals Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas

2002 ◽  
Vol 74 (3) ◽  
pp. 401-405
Author(s):  
Christine Charles
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Compressive Stress ◽  
Structural Properties ◽  
Film Growth ◽  
Low Pressure ◽  
Ion Flux ◽  
High Density ◽  
Silicon Dioxide Films

Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.

Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2plasmas

2005 ◽  
Vol 14 (2) ◽  
pp. S42-S52 ◽  
Author(s):  
G Cunge ◽  
M Kogelschatz ◽  
O Joubert ◽  
N Sadeghi
Keyword(s):  
High Density ◽  
Silicon Etching ◽  
Wall Interactions
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