In situ pulsed laser‐induced thermal desorption studies of the silicon chloride surface layer during silicon etching in high density plasmas of Cl2 and Cl2/O2 mixtures

1994 ◽  
Vol 12 (5) ◽  
pp. 2630-2640 ◽  
Author(s):  
C. C. Cheng ◽  
K. V. Guinn ◽  
V. M. Donnelly ◽  
I. P. Herman
Keyword(s):  
Surface Layer ◽  
Thermal Desorption ◽  
Pulsed Laser ◽  
High Density ◽  
Silicon Etching

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

In situ deposition of ErNi2B2C films by pulsed laser ablation technique

1998 ◽  
Vol 299 (1-2) ◽  
pp. 15-22 ◽  
Author(s):  
A Canesi ◽  
M.R Cimberle ◽  
C Ferdeghini ◽  
A Diaspro ◽  
P Guasconi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ablation Technique ◽  
In Situ Deposition ◽  
Laser Ablation Technique

scholarly journals In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

1997 ◽  
Vol 502 ◽  
Author(s):  
Dave H. A. Blank ◽  
Horst Rogalla
Keyword(s):  
Thin Films ◽  
High Pressures ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
High Energy ◽  
Diagnostic Tools ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

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