Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr∕Cl2∕O2 plasma

2004 ◽  
Vol 96 (8) ◽  
pp. 4578-4587 ◽  
Author(s):  
G. Cunge ◽  
M. Kogelschatz ◽  
N. Sadeghi
Keyword(s):  
High Density ◽  
Silicon Etching ◽  
O2 Plasma ◽  
Loss Mechanisms

Specific features of intensification of silicon etching in CF4/O2 plasma

2007 ◽  
Vol 36 (5) ◽  
pp. 321-332 ◽  
Author(s):  
Yu. N. Grigoryev ◽  
A. G. Gorobchuk
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

scholarly journals Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1026
Author(s):  
Young-Hee Joo ◽  
Jae-Hyung Wi ◽  
Woo-Jung Lee ◽  
Yong-Duck Chung ◽  
Dae-Hyung Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Treatment ◽  
Work Function ◽  
Band Gap ◽  
Optical Band Gap ◽  
High Density ◽  
Work Function Tuning ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc’s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.

Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2plasmas

2005 ◽  
Vol 14 (2) ◽  
pp. S42-S52 ◽  
Author(s):  
G Cunge ◽  
M Kogelschatz ◽  
O Joubert ◽  
N Sadeghi
Keyword(s):  
High Density ◽  
Silicon Etching ◽  
Wall Interactions

scholarly journals Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma

2020 ◽  
Vol 137 (3) ◽  
pp. 313-316
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma

Comparison of models for silicon etching in CF4 + O2 plasma

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1964-1968 ◽  
Author(s):  
R. Knizikevičius
Keyword(s):  
Silicon Etching ◽  
O2 Plasma
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