Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3

1994 ◽  
Vol 12 (2) ◽  
pp. 333-344 ◽  
Author(s):  
G. S. Oehrlein ◽  
Y. Zhang ◽  
D. Vender ◽  
O. Joubert
Keyword(s):  
Silicon Dioxide ◽  
High Density ◽  
Silicon Etching

Preparation and Properties of High-Density Polyethylene/Silica Composites

2011 ◽  
Vol 279 ◽  
pp. 115-119 ◽  
Author(s):  
Jing Long Gao ◽  
Yan Hui Liu ◽  
Shou Dong Wei
Keyword(s):  
Mechanical Properties ◽  
Thermal Properties ◽  
Thermal Degradation ◽  
Yield Strength ◽  
Silicon Dioxide ◽  
High Density Polyethylene ◽  
High Density ◽  
Breaking Elongation ◽  
Silica Dioxide ◽  
Silicon Dioxide Content

High-density polyethylene (HDPE)/silica composites with different silicon dioxide fraction were prepared by the melting blend method. The effects of silicon dioxide content on the thermal properties and mechanical properties were mainly investigated. The results show that the thermal degradation of the composites shifts towards higher temperatures as the concentration of silicon dioxide is increased. With increasing silica dioxide content, the tension yield strength of HDPE/silicon composites increased, but its breaking elongation decreased. When silicon dioxide content is 5 %, the tension yield strength and its breaking elongation are 29.33 MPa and 102.82 %, respectively.

scholarly journals Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas

2002 ◽  
Vol 74 (3) ◽  
pp. 401-405
Author(s):  
Christine Charles
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Compressive Stress ◽  
Structural Properties ◽  
Film Growth ◽  
Low Pressure ◽  
Ion Flux ◽  
High Density ◽  
Silicon Dioxide Films

Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.

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