Growth kinetics and properties of ultrathin films of silicon dioxide

1992 ◽  
Author(s):  
Vjacheslav V. Khatko ◽  
N. V. Rumak
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Ultrathin Films

Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

1984 ◽  
Vol 44 (6) ◽  
pp. 626-628 ◽  
Author(s):  
K. K. Ng ◽  
W. J. Polito ◽  
J. R. Ligenza
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Thin Silicon ◽  
Kinetics Of ◽  
Oxidation System

Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N2O ambient

1996 ◽  
Vol 79 (3) ◽  
pp. 1464-1467 ◽  
Author(s):  
N. Koyama ◽  
T. Endoh ◽  
H. Fukuda ◽  
S. Nomura
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Silicon Dioxide Films ◽  
Kinetics Of

Molecular orientation in ultrathin films of α-sexithiophene on silicon dioxide revealed by spatially resolved confocal spectroscopy

2005 ◽  
Vol 155 (2) ◽  
pp. 287-290 ◽  
Author(s):  
Enrico Da Como ◽  
Maria Antonietta Loi ◽  
Franco Dinelli ◽  
Mauro Murgia ◽  
Fabio Biscarini ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Ultrathin Films ◽  
Molecular Orientation ◽  
Spatially Resolved ◽  
Confocal Spectroscopy

scholarly journals On the Limits of Scanning Thermal Microscopy of Ultrathin Films

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 518
Author(s):  
Christoph Metzke ◽  
Werner Frammelsberger ◽  
Jonas Weber ◽  
Fabian Kühnel ◽  
Kaichen Zhu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Ultrathin Films ◽  
Hexagonal Boron Nitride ◽  
Test Sample ◽  
Copper Iodide ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Force Microscopy ◽  
Transfer Processes ◽  
Atomic Force

Heat transfer processes in micro- and nanoscale devices have become more and more important during the last decades. Scanning thermal microscopy (SThM) is an atomic force microscopy (AFM) based method for analyzing local thermal conductivities of layers with thicknesses in the range of several nm to µm. In this work, we investigate ultrathin films of hexagonal boron nitride (h-BN), copper iodide in zincblende structure (γ-CuI) and some test sample structures fabricated of silicon (Si) and silicon dioxide (SiO2) using SThM. Specifically, we analyze and discuss the influence of the sample topography, the touching angle between probe tip and sample, and the probe tip temperature on the acquired results. In essence, our findings indicate that SThM measurements include artefacts that are not associated with the thermal properties of the film under investigation. We discuss possible ways of influence, as well as the magnitudes involved. Furthermore, we suggest necessary measuring conditions that make qualitative SThM measurements of ultrathin films of h-BN with thicknesses at or below 23 nm possible.

Rapid Thermal Oxidation of Polysilicon and Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
Jaim Nulman
Keyword(s):  
Silicon Dioxide ◽  
Density Of States ◽  
Growth Kinetics ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Pure Oxygen ◽  
Process Time ◽  
Crystal Silicon ◽  
Kinetics Of

AbstractGrowth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

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