Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N2O ambient

1996 ◽  
Vol 79 (3) ◽  
pp. 1464-1467 ◽  
Author(s):  
N. Koyama ◽  
T. Endoh ◽  
H. Fukuda ◽  
S. Nomura
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Silicon Dioxide Films ◽  
Kinetics Of

Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

1984 ◽  
Vol 44 (6) ◽  
pp. 626-628 ◽  
Author(s):  
K. K. Ng ◽  
W. J. Polito ◽  
J. R. Ligenza
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Thin Silicon ◽  
Kinetics Of ◽  
Oxidation System

Rapid Thermal Oxidation of Polysilicon and Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
Jaim Nulman
Keyword(s):  
Silicon Dioxide ◽  
Density Of States ◽  
Growth Kinetics ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Pure Oxygen ◽  
Process Time ◽  
Crystal Silicon ◽  
Kinetics Of

AbstractGrowth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of
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