scholarly journals Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma

2021 ◽  
Vol 39 (6) ◽  
pp. 062406
Author(s):  
Ali Mahmoodinezhad ◽  
Carlos Morales ◽  
Franziska Naumann ◽  
Paul Plate ◽  
Robert Meyer ◽  
...  
2016 ◽  
Vol 45 (46) ◽  
pp. 18737-18741 ◽  
Author(s):  
Hua Jin ◽  
Dirk Hagen ◽  
Maarit Karppinen

We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.


2013 ◽  
Vol 2 (12) ◽  
pp. P114-P116 ◽  
Author(s):  
J.-S. Choi ◽  
B. S. Yang ◽  
S.-J. Won ◽  
J. R. Kim ◽  
S. Suh ◽  
...  

2017 ◽  
Vol 46 (47) ◽  
pp. 16551-16561 ◽  
Author(s):  
Richard O'Donoghue ◽  
Julian Rechmann ◽  
Morteza Aghaee ◽  
Detlef Rogalla ◽  
Hans-Werner Becker ◽  
...  

Lowest temperature to date for the ALD growth of Ga2O3 thin films and the 2nd highest GPC regarding Ga2O3 ALD.


2021 ◽  
pp. 151405
Author(s):  
Yoonseo Jang ◽  
Dohwan Jung ◽  
Prakash R. Sultane ◽  
Eric S. Larsen ◽  
Christopher W. Bielawski ◽  
...  

2019 ◽  
Vol 25 (4) ◽  
pp. 233-242 ◽  
Author(s):  
Stephen E. Potts ◽  
Luc R. Van den Elzen ◽  
Gijs Dingemans ◽  
Erik Langereis ◽  
Wytze Keuning ◽  
...  

2016 ◽  
Vol 120 (18) ◽  
pp. 9874-9883 ◽  
Author(s):  
Anil U. Mane ◽  
Amy J. Allen ◽  
Ravindra K. Kanjolia ◽  
Jeffrey W. Elam

2016 ◽  
Vol 34 (1) ◽  
pp. 01A109 ◽  
Author(s):  
Tomi Iivonen ◽  
Jani Hämäläinen ◽  
Benoît Marchand ◽  
Kenichiro Mizohata ◽  
Miika Mattinen ◽  
...  

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