scholarly journals Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Materials ◽  
2015 ◽  
Vol 8 (2) ◽  
pp. 600-610 ◽  
Author(s):  
Hui-Ying Li ◽  
Yun-Fei Liu ◽  
Yu Duan ◽  
Yong-Qiang Yang ◽  
Yi-Nan Lu
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Electroluminescent Devices ◽  
Layer Deposition ◽  
Organic Electroluminescent

scholarly journals Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

2019 ◽  
Vol 37 (4) ◽  
pp. 040901 ◽  
Author(s):  
Fatemeh S. M. Hashemi ◽  
LiAo Cao ◽  
Felix Mattelaer ◽  
Timo Sajavaara ◽  
J. Ruud van Ommen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Nucleation Effects in the Atomic Layer Deposition of Nickel–Aluminum Oxide Thin Films

2020 ◽  
Vol 32 (5) ◽  
pp. 1925-1936 ◽  
Author(s):  
Jon G. Baker ◽  
Joel R. Schneider ◽  
James A. Raiford ◽  
Camila de Paula ◽  
Stacey F. Bent
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Nickel Aluminum ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Low-temperature atomic layer deposition of crystalline manganese oxide thin films

2016 ◽  
Vol 45 (46) ◽  
pp. 18737-18741 ◽  
Author(s):  
Hua Jin ◽  
Dirk Hagen ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.

Homogenous Thin Films Prepared on Microchannel Plates via Atomic Layer Deposition

2015 ◽  
Vol 1096 ◽  
pp. 93-97
Author(s):  
Bao Jun Yan ◽  
Shu Lin Liu ◽  
Lu Ping Yang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Good Method ◽  
Element Distribution ◽  
Oxide Thin Films ◽  
X Ray ◽  
Precise Control ◽  
Layer Deposition

Oxide thin films such as aluminum oxide doped with zinc (AZO), and aluminum oxide (Al2O3) were prepared in the pores of microchannel plate (MCP) by atomic layer deposition (ALD), which is a precise control thin film thickness on substrate with high aspect ratio structure. In this paper, homogenous oxide thin films deposited on varied substrates were prepared by ALD technology under different conditions, and the morphology, element distribution and structure of deposited samples are systematically investigated by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), and x-ray diffraction (XRD) respectively, The results show that ALD technique is a good method to grow homogenous thin films on MCP.

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