Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

2013 ◽  
Vol 2 (12) ◽  
pp. P114-P116 ◽  
Author(s):  
J.-S. Choi ◽  
B. S. Yang ◽  
S.-J. Won ◽  
J. R. Kim ◽  
S. Suh ◽  
...  
2004 ◽  
Vol 14 (2) ◽  
pp. 90-93
Author(s):  
Won-Jun Lee ◽  
Joo-Hyeon Lee ◽  
Chang-Hee Han ◽  
Un-Jung Kim ◽  
Youn-Seung Lee ◽  
...  

2010 ◽  
Vol 49 (7) ◽  
pp. 071504 ◽  
Author(s):  
Won-Jun Lee ◽  
Chang-Hee Han ◽  
Jae-Kyun Park ◽  
Youn-Seoung Lee ◽  
Sa-Kyun Rha

2016 ◽  
Vol 45 (46) ◽  
pp. 18737-18741 ◽  
Author(s):  
Hua Jin ◽  
Dirk Hagen ◽  
Maarit Karppinen

We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.


2004 ◽  
Vol 43 (No. 3A) ◽  
pp. L328-L330 ◽  
Author(s):  
Joo-Hyeon Lee ◽  
Un-Jung Kim ◽  
Chang-Hee Han ◽  
Sa-Kyun Rha ◽  
Won-Jun Lee ◽  
...  

2018 ◽  
Vol 36 (1) ◽  
pp. 01B103 ◽  
Author(s):  
Shashank Balasubramanyam ◽  
Akhil Sharma ◽  
Vincent Vandalon ◽  
Harm C. M. Knoops ◽  
Wilhelmus M. M. (Erwin) Kessels ◽  
...  

2018 ◽  
Vol 10 (46) ◽  
pp. 40286-40293 ◽  
Author(s):  
Hanearl Jung ◽  
Il-Kwon Oh ◽  
Chang Mo Yoon ◽  
Bo-Eun Park ◽  
Sanghun Lee ◽  
...  

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