Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

2016 ◽  
Vol 120 (18) ◽  
pp. 9874-9883 ◽  
Author(s):  
Anil U. Mane ◽  
Amy J. Allen ◽  
Ravindra K. Kanjolia ◽  
Jeffrey W. Elam
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma

2021 ◽  
Vol 39 (6) ◽  
pp. 062406
Author(s):  
Ali Mahmoodinezhad ◽  
Carlos Morales ◽  
Franziska Naumann ◽  
Paul Plate ◽  
Robert Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

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