Low-temperature atomic layer deposition of crystalline manganese oxide thin films
Keyword(s):
We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.
2011 ◽
Vol 15
(2)
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pp. D14-D17
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2021 ◽
Vol 39
(6)
◽
pp. 062406
Keyword(s):
2016 ◽
Vol 34
(1)
◽
pp. 01A109
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Keyword(s):