Ultrahigh resolution chirped distributed feedback gratings fabricated by electron-beam lithography using bent waveguides for low-cost photonic components

1995 ◽  
Vol 13 (6) ◽  
pp. 2853 ◽  
Author(s):  
H. Hillmer
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Distributed Feedback ◽  
Ultrahigh Resolution ◽  
Bent Waveguides ◽  
Photonic Components

Ultrahigh resolution of calixarene negative resist in electron beam lithography

1996 ◽  
Vol 68 (9) ◽  
pp. 1297-1299 ◽  
Author(s):  
J. Fujita ◽  
Y. Ohnishi ◽  
Y. Ochiai ◽  
S. Matsui
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ultrahigh Resolution

Grating Coupled Waveguide Biosensor Based on Porous Silicon

2011 ◽  
Vol 1301 ◽  
Author(s):  
Xing Wei ◽  
Sharon M. Weiss
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Nucleic Acids ◽  
Surface Area ◽  
Small Molecule ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Grating Couplers ◽  
Silicon Waveguides ◽  
A New Technique

ABSTRACTPorous silicon waveguides with integrated porous silicon grating couplers are demonstrated as small molecule biosensors. Two fabrication methods are presented for the grating couplers: standard electron beam lithography with reactive ion etching and a new technique based on direct imprinting of porous substrates. Although the gratings fabricated using standard lithographic techniques have steeper sidewalls and enable a larger available sensing surface area inside the waveguide, the imprinted gratings have the advantage of rapid and low-cost fabrication. Both the lithographically and imprinted sensors are shown to have waveguide losses on the order of 10 dB/cm, and both are demonstrated for detection of 16mer nucleic acids.

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ammonium Hydroxide ◽  
Hydrogen Silsesquioxane ◽  
Ultrahigh Resolution ◽  
Patterned Media ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Nanodot Arrays

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.

scholarly journals A low cost high resolution pattern generator for electron-beam lithography

2003 ◽  
Vol 74 (7) ◽  
pp. 3579-3582 ◽  
Author(s):  
G. Pennelli ◽  
F. D’ Angelo ◽  
M. Piotto ◽  
G. Barillaro ◽  
B. Pellegrini
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Pattern Generator

Fabrication of Nanomechanical Resonators in Silicon Nitride

2009 ◽  
Vol 60-61 ◽  
pp. 228-231
Author(s):  
Mei Liu ◽  
Jian Zhu ◽  
Shi Xing Jia ◽  
Min Zhuo ◽  
Le Lu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Electron Beam Lithography ◽  
Gas Flow ◽  
High Efficiency ◽  
Low Cost ◽  
Optical Lithography ◽  
Lower Electrode ◽  
Nanomechanical Resonators ◽  
O2 Plasma

We report our efforts towards fabricating nanomechanical resonators patterned by optical lithography in silicon nitride. Optical lithography has advantages of low cost and high efficiency over electron-beam lithography. Double clamped beam resonators with thickness 150nm, length and lateral dimensions 20um, 800nm have been designed. Through utilizing reactive ion etching and controlling gas flow, reaction time of CF4 and O2 plasma and power of the upper and lower electrode, nanomechanical resonators with lateral dimensions within 200nm are demonstrated.

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