Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Author(s):  
Vadim Sidorkin ◽  
Emile van der Drift ◽  
Huub Salemink
2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.


1996 ◽  
Vol 68 (9) ◽  
pp. 1297-1299 ◽  
Author(s):  
J. Fujita ◽  
Y. Ohnishi ◽  
Y. Ochiai ◽  
S. Matsui

1984 ◽  
Vol 44 (4) ◽  
pp. 468-469 ◽  
Author(s):  
P. M. Mankiewich ◽  
H. G. Craighead ◽  
T. R. Harrison ◽  
A. H. Dayem

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