Ultrahigh-resolution pattern using electron-beam lithography HF wet etching

2007 ◽  
Vol 25 (4) ◽  
pp. 1147 ◽  
Author(s):  
R. Tiron ◽  
L. Mollard ◽  
O. Louveau ◽  
E. Lajoinie
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Wet Etching ◽  
Ultrahigh Resolution

Ultrahigh resolution of calixarene negative resist in electron beam lithography

1996 ◽  
Vol 68 (9) ◽  
pp. 1297-1299 ◽  
Author(s):  
J. Fujita ◽  
Y. Ohnishi ◽  
Y. Ochiai ◽  
S. Matsui
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ultrahigh Resolution

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ammonium Hydroxide ◽  
Hydrogen Silsesquioxane ◽  
Ultrahigh Resolution ◽  
Patterned Media ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Nanodot Arrays

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.

Submicrometer Shadow Mask Fabricated by Anisotropic Wet Etching and Focused Ion Beam Techniques for Nanofabrication in UHV

1998 ◽  
Vol 12 (14n15) ◽  
pp. 597-605 ◽  
Author(s):  
Hanyu Sheng ◽  
Daisuke Fujita ◽  
Taizo Ohgi ◽  
Hiroshi Okamoto ◽  
Hitoshi Nejoh
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Wet Etching ◽  
Ultra High Vacuum ◽  
New Method ◽  
Shadow Mask ◽  
Pattern Size

We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5×2.5 mm2 and opaque part about 1 μm can be obtained.

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