Tunable distributed-feedback laser gratings for telecom applications, manufactured by electron-beam lithography

2002 ◽  
Vol 20 (6) ◽  
pp. 2749 ◽  
Author(s):  
S. A. Rishton ◽  
B. Pezeshki ◽  
S. Zou ◽  
G. Yoffe ◽  
W. Henschel
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Distributed Feedback ◽  
Distributed Feedback Laser

Laterally-Coupled Distributed Feedback laser fabricated with electron beam lithography and chemically assisted ion beam etching

1995 ◽  
Vol 27 (1-4) ◽  
pp. 67-70 ◽  
Author(s):  
R.C. Tiberio ◽  
P.F. Chapman ◽  
J.P. Drumheller ◽  
R.D. Martin ◽  
S. Forouhar ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Ion Beam Etching

Organic-based distributed feedback lasers by direct electron-beam lithography on conjugated polymers

2007 ◽  
Vol 91 (10) ◽  
pp. 101110 ◽  
Author(s):  
Ripalta Stabile ◽  
Andrea Camposeo ◽  
Luana Persano ◽  
Silvia Tavazzi ◽  
Roberto Cingolani ◽  
...  
Keyword(s):  
Electron Beam ◽  
Conjugated Polymers ◽  
Electron Beam Lithography ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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