Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Abdulkerim KARABULUT; İkram ORAK; Abdülmecit TÜRÜT

doi:10.32571/ijct.456902

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

International Journal of Chemistry and Technology ◽

10.32571/ijct.456902 ◽

2018 ◽

Vol 2 (2) ◽

Cited By ~ 6

Author(s):

Abdulkerim KARABULUT ◽

İkram ORAK ◽

Abdülmecit TÜRÜT

Keyword(s):

Interfacial Layer ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

High K

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Electrical characteristics of plasma‐deposited diamondlike carbon/silicon metal–insulator–semiconductor structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577875 ◽

1992 ◽

Vol 10 (5) ◽

pp. 3125-3130 ◽

Cited By ~ 10

Author(s):

Jayshree Seth ◽

M. I. Chaudhry ◽

S. V. Babu

Keyword(s):

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Diamondlike Carbon

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Electrical characteristics of DNA-based metal-insulator-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.3447985 ◽

2010 ◽

Vol 107 (12) ◽

pp. 124518 ◽

Cited By ~ 36

Author(s):

S. Sönmezoğlu ◽

Ö. Ateş Sönmezoğlu ◽

G. Çankaya ◽

A. Yıldırım ◽

N. Serin

Keyword(s):

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

Bulletin of Materials Science ◽

10.1007/s12034-016-1341-5 ◽

2017 ◽

Vol 40 (1) ◽

pp. 67-78 ◽

Cited By ~ 3

Author(s):

SLAH HLALI ◽

NEILA HIZEM ◽

ADEL KALBOUSSI

Keyword(s):

Gate Dielectrics ◽

Quantum Mechanical ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Mechanical Models

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Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si

Thin Solid Films ◽

10.1016/0040-6090(92)90122-r ◽

1992 ◽

Vol 207 (1-2) ◽

pp. 193-196 ◽

Cited By ~ 25

Author(s):

T.S. Kalkur ◽

Y.C. Lu

Keyword(s):

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521383 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A901 ◽

Cited By ~ 10

Author(s):

A. Gómez ◽

H. Castán ◽

H. García ◽

S. Dueñas ◽

L. Bailón ◽

...

Keyword(s):

Electrical Characterization ◽

Negative Resistance ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

High K

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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Microelectronics Reliability ◽

10.1016/j.microrel.2009.04.003 ◽

2009 ◽

Vol 49 (7) ◽

pp. 716-720 ◽

Cited By ~ 18

Author(s):

P. Thangadurai ◽

W.D. Kaplan ◽

V. Mikhelashvili ◽

G. Eisenstein

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Electrical Characteristics ◽

Beam Irradiation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.01ad02 ◽

2016 ◽

Vol 56 (1S) ◽

pp. 01AD02 ◽

Cited By ~ 1

Author(s):

Jung-Ruey Tsai ◽

Pi-Chun Juan ◽

Cheng-Li Lin ◽

Guo-Cheng Lin

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

High Power ◽

Metal Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

High K

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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3532544 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA07 ◽

Cited By ~ 33

Author(s):

F. Campabadal ◽

J. M. Rafí ◽

M. Zabala ◽

O. Beldarrain ◽

A. Faigón ◽

...

Keyword(s):

Atomic Layer ◽

Silicon Substrates ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Comparison of the electrical characteristics of Si metal–insulator–semiconductor tunnel diodes with interfacial layer grown by rapid thermal oxidation of Si in O2 and in N2O

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587952 ◽

1995 ◽

Vol 13 (2) ◽

pp. 390 ◽

Cited By ~ 4

Author(s):

G. Eftekhari

Keyword(s):

Thermal Oxidation ◽

Interfacial Layer ◽

Electrical Characteristics ◽

Tunnel Diodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Rapid Thermal Oxidation

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Optimization of Si interface control layer thickness for high-k GaAs metal–insulator–semiconductor structures

Materials Science and Engineering B ◽

10.1016/j.mseb.2009.03.009 ◽

2009 ◽

Vol 165 (1-2) ◽

pp. 122-125 ◽

Cited By ~ 1

Author(s):

Masamichi Akazawa ◽

Hideki Hasegawa

Keyword(s):

Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Interface Control ◽

High K ◽

Control Layer

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