Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor‐insulator‐semiconductor and metal‐insulator‐semiconductor devices

1984 ◽  
Vol 55 (8) ◽  
pp. 2990-2994 ◽  
Author(s):  
Amal K. Ghosh ◽  
Tom Feng ◽  
Joel I. Haberman ◽  
H. Paul Maruska
Keyword(s):  
Work Function ◽  
Electron Affinity ◽  
Semiconductor Devices ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Interfacial Charge

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

2014 ◽  
Vol 116 (1) ◽  
pp. 014504 ◽  
Author(s):  
R. V. Galatage ◽  
D. M. Zhernokletov ◽  
H. Dong ◽  
B. Brennan ◽  
C. L. Hinkle ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Frequency Dispersion ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States

scholarly journals DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

1994 ◽  
Vol 43 (11) ◽  
pp. 1883
Author(s):  
HUANG HE ◽  
TANG DING-YUAN ◽  
TONG FEI-MING ◽  
ZHENG GUO-ZHEN
Keyword(s):  
Storage Time ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Dynamic Storage

Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices

1996 ◽  
Vol 80 (5) ◽  
pp. 2873-2882 ◽  
Author(s):  
Helen M. Dauplaise ◽  
Kenneth Vaccaro ◽  
Andrew Davis ◽  
George O. Ramseyer ◽  
Joseph P. Lorenzo
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
Sign in / Sign up

Export Citation Format

Share Document