Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation

1998 ◽  
Vol 16 (3) ◽  
pp. 1502-1508 ◽  
Author(s):  
Chung-Kyu Yeon ◽  
Hyuk-Joon You
Keyword(s):  
Reactive Ion Etching ◽  
Deep Submicron ◽  
Ion Etching ◽  
Shallow Trench Isolation ◽  
Profile Control ◽  
Trench Isolation ◽  
Etching System

Process Characterization of a Load-Locked, Reactive Ion Etching System

1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield
Keyword(s):  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Chamber Pressure ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Process Characterization ◽  
Profile Control ◽  
Wall Profile ◽  
Etching System

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.

NbN edge junction fabrication: edge profile control by reactive ion etching

1989 ◽  
Vol 25 (2) ◽  
pp. 1239-1242 ◽  
Author(s):  
X.F. Meng ◽  
R.S. Amos ◽  
A.W. Lichtenberger ◽  
R.J. Mattauch ◽  
M.J. Feldman
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Profile Control ◽  
Edge Profile

GaAs Taper Etching by Mixture Gas Reactive Ion Etching System

1991 ◽  
Vol 30 (Part 2, No. 12B) ◽  
pp. L2136-L2138
Author(s):  
Makoto Hirano ◽  
Kazuyoshi Asai
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching System

Etching of 6H‐SiC and 4H‐SiC using  NF 3 in a Reactive Ion Etching System

1996 ◽  
Vol 143 (5) ◽  
pp. 1750-1753 ◽  
Author(s):  
J. B. Casady ◽  
E. D. Luckowski ◽  
M. Bozack ◽  
D. Sheridan ◽  
R. W. Johnson ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching System

Nanopattern Profile Control Technology Using Reactive Ion Etching for 100 GB Optical Disc Mastering

2006 ◽  
Vol 45 (2B) ◽  
pp. 1414-1418 ◽  
Author(s):  
Megumi Fujimura ◽  
Yasuo Hosoda ◽  
Masahiro Katsumura ◽  
Masaki Kobayashi ◽  
Hiroaki Kitahara ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Control Technology ◽  
Optical Disc ◽  
Ion Etching ◽  
Profile Control
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