International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)

Sorting of biontolecules via microdevices

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.823837 ◽

2005 ◽

Author(s):

Chia-Fu Chou ◽

R.H. Austin ◽

O. Bakajin ◽

J.A. Castelino ◽

S.S. Chan ◽

...

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Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824174 ◽

2003 ◽

Cited By ~ 5

Author(s):

H. Majima ◽

H. Ishikuro ◽

T. Hiramoto

Keyword(s):

Threshold Voltage ◽

Narrow Channel ◽

Quantum Mechanical ◽

Channel Effect

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A 25 GHz InGaAs/InAlAs-InP HBT power MMIC with 48% power added efficiency

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824181 ◽

2003 ◽

Cited By ~ 3

Author(s):

K.W. Kobayashi ◽

Li Yang ◽

A. Gutierrez-Aitken ◽

E. Kaneshiro ◽

F.M. Yamada ◽

...

Keyword(s):

Power Added Efficiency

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Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824169 ◽

2003 ◽

Cited By ~ 4

Author(s):

K.F. Dombrowski ◽

A. Fischer ◽

B. Dietrich ◽

I. De Wolf ◽

H. Bender ◽

...

Keyword(s):

Raman Spectroscopy ◽

Deep Submicron ◽

Shallow Trench Isolation ◽

Mos Devices ◽

Uv Raman Spectroscopy ◽

Trench Isolation ◽

Uv Raman

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High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824300 ◽

2003 ◽

Cited By ~ 38

Author(s):

Y.-F. Wu ◽

D. Kapolnek ◽

J. Ibbetson ◽

N.-Q. Zhang ◽

P. Parikh ◽

...

Keyword(s):

High Power ◽

Power Performance ◽

Al Content ◽

Gan Hemts ◽

High Al Content ◽

Very High

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The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.823850 ◽

2003 ◽

Cited By ~ 48

Author(s):

J.M. Hergenrother ◽

D. Monroe ◽

F.P. Klemens ◽

A. Komblit ◽

G.R. Weber ◽

...

Keyword(s):

Gate Length ◽

Independent Gate

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Analysis and control of hysteresis in PD/SOI CMOS

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824278 ◽

2003 ◽

Cited By ~ 5

Author(s):

M.M. Pelella ◽

J.G. Fossum ◽

M.-H. Chiang ◽

G.O. Workman ◽

C.R. Tretz

Keyword(s):

And Control ◽

Soi Cmos

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Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824272 ◽

2003 ◽

Author(s):

M. Saito ◽

M. Yoshida ◽

K. Asaka ◽

H. Goto ◽

N. Fukuda ◽

...

Keyword(s):

High Speed ◽

Large Scale ◽

Logic Circuits ◽

Thermally Stable

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0.5-μm-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-μm CMOS applications

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824229 ◽

2003 ◽

Cited By ~ 3

Author(s):

T. Fukuda ◽

T. Ohshima ◽

H. Aoki ◽

H. Maruyama ◽

H. Miyazaki ◽

...

Keyword(s):

Dual Damascene

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0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824304 ◽

2003 ◽

Author(s):

T. Onai ◽

S. Tsujikawa ◽

T. Uchino ◽

R. Tsuchiya ◽

K. Ohnishi ◽

...

Keyword(s):

High Speed ◽

Cmos Technology ◽

Gate System

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International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Sorting of biontolecules via microdevices

Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

A 25 GHz InGaAs/InAlAs-InP HBT power MMIC with 48% power added efficiency

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

Analysis and control of hysteresis in PD/SOI CMOS

Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs

0.5-μm-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-μm CMOS applications

0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system

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International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Sorting of biontolecules via microdevices

Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

A 25 GHz InGaAs/InAlAs-InP HBT power MMIC with 48% power added efficiency

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

Analysis and control of hysteresis in PD/SOI CMOS

Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs

0.5-μm-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-μm CMOS applications

0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
Latest Publications