Process Characterization of a Load-Locked, Reactive Ion Etching System

1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield
Keyword(s):  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Chamber Pressure ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Process Characterization ◽  
Profile Control ◽  
Wall Profile ◽  
Etching System

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.

scholarly journals Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 864 ◽  
Author(s):  
Zhitian Shi ◽  
Konstantins Jefimovs ◽  
Lucia Romano ◽  
Marco Stampanoni
Keyword(s):  
Aspect Ratio ◽  
Etching Rate ◽  
Critical Role ◽  
Reactive Ion Etching ◽  
Chamber Pressure ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray ◽  
Aspect Ratios ◽  
Profile Control

The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images. The difficulty of etching grating lines with high aspect ratios when the pitch is in the range of a few micrometers has greatly limited imaging applications based on X-ray grating interferometry. A high etching rate with low aspect ratio dependence is crucial for higher X-ray energy applications and good profile control by deep reactive ion etching of grating patterns. To achieve this goal, a modified Coburn–Winters model was applied in order to study the influence of key etching parameters, such as chamber pressure and etching power. The recipe for deep reactive ion etching was carefully fine-tuned based on the experimental results. Silicon gratings with an area of 70 × 70 mm2, pitch size of 1.2 and 2 μm were fabricated using the optimized process with aspect ratio α of ~67 and 77, respectively.

Dependence Of Silicon Fracture Strength And Surface Morphology On Deep Reactive Ion Etching Parameters

1998 ◽  
Vol 546 ◽  
Author(s):  
Kuo-Shen Chen ◽  
Arturo A. Ayon ◽  
Kevin A. Lohner ◽  
Mark A. Kepets ◽  
Terran K. Melconian ◽  
...  
Keyword(s):  
Mechanical Testing ◽  
Turbine Blades ◽  
Reactive Ion Etching ◽  
High Stress ◽  
Single Crystal Silicon ◽  
Sem Analysis ◽  
Material Strength ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

AbstractThe development of a high power-density micro-gas turbine engine is currently underway at MIT. The initial goal is to produce the components by deep reactive ion etching (DRIE) single crystal silicon. The capability of the silicon structures to withstand the very high stress levels within the engine limits the performance of the device. This capability is determined by the material strength and by the achievable fillet radii at the root of turbine blades and other etched features rotating at high speeds. These factors are strongly dependent on the DRIE parameters. Etching conditions that yield large fillet radii and good surface quality are desirable from a mechanical standpoint. In order to identify optimal DRIE conditions, a mechanical testing program has been implemented. The designed experiment involves a matrix of 55 silicon wafers with radiused hub flexure specimens etched under different DRIE conditions. The resulting fracture strengths were determined through mechanical testing, while SEM analysis was used to characterize the corresponding fillet radii. The test results will provide the basis for process optimization of micro-turbomachinery fabrication and play an important role in the overall engine redesign.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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