A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation

Shih-Chia Lin; J.B. Kuo;  Kuo-Tai Huang;  Shih-Wei Sun

doi:10.1109/16.830986

A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation

IEEE Transactions on Electron Devices ◽

10.1109/16.830986 ◽

2000 ◽

Vol 47 (4) ◽

pp. 725-733 ◽

Cited By ~ 14

Author(s):

Shih-Chia Lin ◽

J.B. Kuo ◽

Kuo-Tai Huang ◽

Shih-Wei Sun

Keyword(s):

Closed Form ◽

Narrow Channel ◽

Deep Submicron ◽

Gate Bias ◽

Back Gate ◽

Shallow Trench Isolation ◽

Channel Effect ◽

Effect Model ◽

Trench Isolation

Download Full-text

Shallow trench isolation-related narrow channel effect on the kink behaviour of 40nm PD SOI NMOS device

Solid-State Electronics ◽

10.1016/j.sse.2009.11.001 ◽

2010 ◽

Vol 54 (5) ◽

pp. 609-611

Author(s):

H.J. Hung ◽

J.B. Kuo ◽

D. Chen ◽

C.T. Tsai ◽

C.S. Yeh

Keyword(s):

Narrow Channel ◽

Shallow Trench Isolation ◽

Channel Effect ◽

Trench Isolation

Download Full-text

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824169 ◽

2003 ◽

Cited By ~ 4

Author(s):

K.F. Dombrowski ◽

A. Fischer ◽

B. Dietrich ◽

I. De Wolf ◽

H. Bender ◽

...

Keyword(s):

Raman Spectroscopy ◽

Deep Submicron ◽

Shallow Trench Isolation ◽

Mos Devices ◽

Uv Raman Spectroscopy ◽

Trench Isolation ◽

Uv Raman

Download Full-text

A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

1995 International Symposium on VLSI Technology Systems and Applications Proceedings of Technical Papers VTSA-95 ◽

10.1109/vtsa.1995.524652 ◽

2002 ◽

Author(s):

C.M. Liu ◽

F.C. Shone ◽

J.B. Kuo

Keyword(s):

Closed Form ◽

Circuit Simulation ◽

Gate Bias ◽

Saturation Model ◽

Back Gate ◽

Self Heating

Download Full-text

A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515057 ◽

2002 ◽

Cited By ~ 4

Author(s):

C.M. Liu ◽

F.C. Shone ◽

J.B. Kuo

Keyword(s):

Closed Form ◽

Circuit Simulation ◽

Gate Bias ◽

Saturation Model ◽

Back Gate ◽

Self Heating

Download Full-text

An analytical back-gate bias effect model for ultrathin SOI CMOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.202788 ◽

1993 ◽

Vol 40 (4) ◽

pp. 755-765 ◽

Cited By ~ 23

Author(s):

J. Sim ◽

J.B. Kuo

Keyword(s):

Gate Bias ◽

Bias Effect ◽

Back Gate ◽

Effect Model ◽

Ultrathin Soi ◽

Soi Cmos

Download Full-text

Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.802634 ◽

2002 ◽

Vol 49 (10) ◽

pp. 1736-1741 ◽

Cited By ~ 1

Author(s):

M. Togo ◽

K. Watanabe ◽

M. Terai ◽

T. Yamamoto ◽

T. Fukai ◽

...

Keyword(s):

Gate Dielectric ◽

Narrow Channel ◽

Shallow Trench Isolation ◽

Trench Isolation

Download Full-text

Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2013.10.005 ◽

2014 ◽

Vol 91 ◽

pp. 123-126

Author(s):

K. Ota ◽

M. Saitoh ◽

C. Tanaka ◽

T. Numata

Keyword(s):

Experimental Study ◽

Gate Bias ◽

Bias Effect ◽

Short Channel ◽

Short Channel Effect ◽

Back Gate ◽

Buried Oxide ◽

Channel Effect ◽

Nanowire Mosfets

Download Full-text

Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET

Journal of Semiconductors ◽

10.1088/1674-4926/32/6/064004 ◽

2011 ◽

Vol 32 (6) ◽

pp. 064004 ◽

Cited By ~ 1

Author(s):

Zhangli Liu ◽

Zhiyuan Hu ◽

Zhengxuan Zhang ◽

Hua Shao ◽

Ming Chen ◽

...

Keyword(s):

Leakage Current ◽

Deep Submicron ◽

Gate Length ◽

Shallow Trench Isolation ◽

Length Dependence ◽

Trench Isolation

Download Full-text

Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581177 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1502-1508 ◽

Cited By ~ 10

Author(s):

Chung-Kyu Yeon ◽

Hyuk-Joon You

Keyword(s):

Reactive Ion Etching ◽

Deep Submicron ◽

Ion Etching ◽

Shallow Trench Isolation ◽

Profile Control ◽

Trench Isolation ◽

Etching System

Download Full-text

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Chinese Physics B ◽

10.1088/1674-1056/27/2/028501 ◽

2018 ◽

Vol 27 (2) ◽

pp. 028501 ◽

Cited By ~ 1

Author(s):

Meng-Ying Zhang ◽

Zhi-Yuan Hu ◽

Da-Wei Bi ◽

Li-Hua Dai ◽

Zheng-Xuan Zhang

Keyword(s):

Narrow Channel ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Channel Effects ◽

Radiation Induced

Download Full-text