NbN edge junction fabrication: edge profile control by reactive ion etching

1989 ◽  
Vol 25 (2) ◽  
pp. 1239-1242 ◽  
Author(s):  
X.F. Meng ◽  
R.S. Amos ◽  
A.W. Lichtenberger ◽  
R.J. Mattauch ◽  
M.J. Feldman
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Profile Control ◽  
Edge Profile

Nanopattern Profile Control Technology Using Reactive Ion Etching for 100 GB Optical Disc Mastering

2006 ◽  
Vol 45 (2B) ◽  
pp. 1414-1418 ◽  
Author(s):  
Megumi Fujimura ◽  
Yasuo Hosoda ◽  
Masahiro Katsumura ◽  
Masaki Kobayashi ◽  
Hiroaki Kitahara ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Control Technology ◽  
Optical Disc ◽  
Ion Etching ◽  
Profile Control

Multilayer Resist Profile Control in Oxygen Reactive Ion Etching Using Ethanol Gas Mixture

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4450-4453 ◽  
Author(s):  
Yasuki Kimura ◽  
Ryouichi Aoyama ◽  
Seki Suzuki
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Profile Control ◽  
Multilayer Resist

scholarly journals Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 864 ◽  
Author(s):  
Zhitian Shi ◽  
Konstantins Jefimovs ◽  
Lucia Romano ◽  
Marco Stampanoni
Keyword(s):  
Aspect Ratio ◽  
Etching Rate ◽  
Critical Role ◽  
Reactive Ion Etching ◽  
Chamber Pressure ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray ◽  
Aspect Ratios ◽  
Profile Control

The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images. The difficulty of etching grating lines with high aspect ratios when the pitch is in the range of a few micrometers has greatly limited imaging applications based on X-ray grating interferometry. A high etching rate with low aspect ratio dependence is crucial for higher X-ray energy applications and good profile control by deep reactive ion etching of grating patterns. To achieve this goal, a modified Coburn–Winters model was applied in order to study the influence of key etching parameters, such as chamber pressure and etching power. The recipe for deep reactive ion etching was carefully fine-tuned based on the experimental results. Silicon gratings with an area of 70 × 70 mm2, pitch size of 1.2 and 2 μm were fabricated using the optimized process with aspect ratio α of ~67 and 77, respectively.

Reactive Ion Etching of WSi0.6 Gates for GaAs MESFETS

1986 ◽  
Vol 68 ◽  
Author(s):  
C. L. Lin ◽  
Peter D. Hoh
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Intensity Profile ◽  
Electrical Characteristics ◽  
Vertical Edge ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Careful Control ◽  
Edge Profile

AbstractA process for reactive ion etching of 1μm and sub-micron WSi0.6 gates for GaAs MESFET integrated circuits has been developed.Using a CF4/O2 plasma, a 200am film of WSi0.6 could be etched in ≃ 5 minutes.This is sufficiently long for accurate process monitoring.A vertical edge profile has been obtained which is desirable for a self-aligned MESFET process.To achieve the vertical edge, careful control of the degree of over etch was necessary.This was accomplished by monitoring the intensity profile of a laser beam reflected from the wafer being etched.The widths of lines etched in WSi0.6 closely matched those of the resist pattern.Both 1μm and sub-micron FET's were fabricated.with excellent linewidth control and electrical characteristics

Process Characterization of a Load-Locked, Reactive Ion Etching System

1984 ◽  
Vol 38 ◽  
Author(s):  
Margaret M. Hendriks ◽  
S. Shanfield
Keyword(s):  
Reactive Ion Etching ◽  
Single Crystal Silicon ◽  
Chamber Pressure ◽  
Crystal Silicon ◽  
Ion Etching ◽  
Process Characterization ◽  
Profile Control ◽  
Wall Profile ◽  
Etching System

AbstractWe report on process characterization of contact hole etching in a load-locked, hexa-gonal reactive ion etching system. Contact holes were etched in silicon dioxide and phos-phosilicate glass (PSG) with emphasis on wall profile control and selectivity to the underlayer of either single crystal silicon, polysilicon, or aluminum.To achieve these requirements, a two stage etch process was developed. In the first stage, controlled wall taper is obtained with a mixture of CHF3 and O2. The second stage utilizes a mixture of CHF3 and a small amount of CO2 to obtain high selectivity to the underlying material. Evaluation of the effects of chamber pressure, RF power, and gas mixture on taper angle, selectivity, resist erosion, and etch rates is presented.In addition, evidence which suggests that the reproducibility of optimum etch condi-tions can be enhanced by the use of a continuously pumped process chamber will be dis-cussed.

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