Magnetic properties of ion‐beam sputter deposited NiFe ultrathin films

1995 ◽  
Vol 13 (4) ◽  
pp. 2194-2198 ◽  
Author(s):  
Masaki Ueno ◽  
Shuji Tanoue
1988 ◽  
Vol 63 (8) ◽  
pp. 4315-4317 ◽  
Author(s):  
J. Ryu ◽  
Y. Huang ◽  
C. Vittoria

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JB03 ◽  
Author(s):  
Chao Zheng ◽  
Tien-Chi Lan ◽  
Chin Shueh ◽  
Ryan D. Desautels ◽  
Johan van Lierop ◽  
...  
Keyword(s):  

1992 ◽  
Vol 262 ◽  
Author(s):  
A. van Veen ◽  
M. J. W. Greuter ◽  
L. Niesen ◽  
B. Nielsen ◽  
K.G. Lynn

ABSTRACTGas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self- interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.


2014 ◽  
Vol 115 (17) ◽  
pp. 17C108 ◽  
Author(s):  
Dong Zhang ◽  
Sheng Jiang ◽  
Chen Luo ◽  
Yukun Wang ◽  
Wenbin Rui ◽  
...  

2015 ◽  
Vol 117 (17) ◽  
pp. 17B909 ◽  
Author(s):  
S. L. A. Mello ◽  
M. M. Sant'Anna ◽  
C. F. S. Codeço ◽  
S. N. Dong ◽  
T. Yoo ◽  
...  

1992 ◽  
Vol 104-107 ◽  
pp. 1847-1850 ◽  
Author(s):  
Michael A. Russak ◽  
Christopher V. Jahnes ◽  
Erik Klokholm ◽  
Bojan Petek

1989 ◽  
Vol 28 (Part 1, No. 3) ◽  
pp. 361-367 ◽  
Author(s):  
Kenji Sumiyama ◽  
Koichi Takemura ◽  
Noriyuki Kataoka ◽  
Yoji Nakamura

2001 ◽  
Author(s):  
Laurent Dieu ◽  
Peter F. Carcia ◽  
Hideaki Mitsui ◽  
Kunihiko Ueno

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