Magnetic properties of ion‐beam sputter‐deposited Fe‐Ni‐B‐Si films

1988 ◽  
Vol 63 (8) ◽  
pp. 4315-4317 ◽  
Author(s):  
J. Ryu ◽  
Y. Huang ◽  
C. Vittoria
2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.


2014 ◽  
Vol 53 (6S) ◽  
pp. 06JB03 ◽  
Author(s):  
Chao Zheng ◽  
Tien-Chi Lan ◽  
Chin Shueh ◽  
Ryan D. Desautels ◽  
Johan van Lierop ◽  
...  
Keyword(s):  

1992 ◽  
Vol 262 ◽  
Author(s):  
A. van Veen ◽  
M. J. W. Greuter ◽  
L. Niesen ◽  
B. Nielsen ◽  
K.G. Lynn

ABSTRACTGas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self- interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.


2015 ◽  
Vol 117 (17) ◽  
pp. 17B909 ◽  
Author(s):  
S. L. A. Mello ◽  
M. M. Sant'Anna ◽  
C. F. S. Codeço ◽  
S. N. Dong ◽  
T. Yoo ◽  
...  

1992 ◽  
Vol 104-107 ◽  
pp. 1847-1850 ◽  
Author(s):  
Michael A. Russak ◽  
Christopher V. Jahnes ◽  
Erik Klokholm ◽  
Bojan Petek

1989 ◽  
Vol 28 (Part 1, No. 3) ◽  
pp. 361-367 ◽  
Author(s):  
Kenji Sumiyama ◽  
Koichi Takemura ◽  
Noriyuki Kataoka ◽  
Yoji Nakamura

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