scholarly journals Noble Gas Incorporation in Sputtered and Ion Beam Assisted Grown Silicon Films

1992 ◽  
Vol 262 ◽  
Author(s):  
A. van Veen ◽  
M. J. W. Greuter ◽  
L. Niesen ◽  
B. Nielsen ◽  
K.G. Lynn
Keyword(s):  
Noble Gas ◽  
Ion Beam ◽  
Silicon Layer ◽  
Arrival Rate ◽  
Heavy Ion ◽  
Silicon Films ◽  
Defect Analysis ◽  
Gas Desorption ◽  
Sputter Deposited ◽  
Underlying Mechanisms

ABSTRACTGas desorption measurements have been performed on sputter deposited silicon films. The sputter gas was argon or krypton. Parameters influencing the incorporation process e.g. bias voltage, substrate temperature and arrival rate ratio of silicon and noble gas atoms have been systematically varied. The films, a-Si and c-Si, have been characterised by various techniques for composition and defect analysis. A model has been applied to describe the composition of the growing silicon layer. Underlying mechanisms like gas-gas sputtering have been studied in separate ion implantation experiments. For a-Si concentrations as high as 6% Ar and Kr have been found. An important effect is the injection of self- interstitial atoms caused by the low energy heavy ion bombardment. It causes the layer to grow without large open volume defects.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC

1997 ◽  
Author(s):  
X. Yang ◽  
X. Song
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Product ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Contrast Technique ◽  
Defect Mechanism ◽  
Open Defect ◽  
Voltage Contrast

Abstract Novel Focused Ion Beam (FIB) voltage-contrast technique combined with TEM has been used in this study to identify a certain subtle defect mechanism that caused reliability stress failures of a new product. The suspected defect was first isolated to a unique via along the row through electrical testing and layout analysis. Static voltage contrast of FIB cross-section was used to confirm the suspected open defect at the via. Precision Transmission Electron Microscope (TEM) was then used to reveal the detail of the defect. Based on the result, proper process changes were implemented. The failure mode was successfully eliminated and the reliability of the product was greatly improved.

Ballooning structure in density fluctuations observed with the 2 MeV heavy ion beam probe on the TEXT-U tokamak

1995 ◽  
Author(s):  
A. Fujisawa ◽  
A. Ouroua ◽  
J.W. Heard ◽  
T.P. Crowley ◽  
P.M. Schoch ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Density Fluctuations ◽  
Heavy Ion Beam ◽  
Heavy Ion Beam Probe

scholarly journals Direct observation of potential profiles with a 200 keV heavy ion beam probe on the Compact Helical System

1997 ◽  
Vol 4 (5) ◽  
pp. 1357-1361 ◽  
Author(s):  
A. Fujisawa ◽  
H. Iguchi ◽  
S. Lee ◽  
T. P. Crowley ◽  
Y. Hamada ◽  
...  
Keyword(s):  
Direct Observation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Heavy Ion Beam ◽  
Heavy Ion Beam Probe

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam

scholarly journals Comparison of short-range order in irradiated dysprosium titanates

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Roman Sherrod ◽  
Eric C. O’Quinn ◽  
Igor M. Gussev ◽  
Cale Overstreet ◽  
Joerg Neuefeind ◽  
...  
Keyword(s):  
Long Range ◽  
Short Range ◽  
Structural Model ◽  
Ion Irradiation ◽  
Function Analysis ◽  
Ion Beam ◽  
Structural Response ◽  
Heavy Ion ◽  
Range Order ◽  
Radiation Resistant

AbstractThe structural response of Dy2TiO5 oxide under swift heavy ion irradiation (2.2 GeV Au ions) was studied over a range of structural length scales utilizing neutron total scattering experiments. Refinement of diffraction data confirms that the long-range orthorhombic structure is susceptible to ion beam-induced amorphization with limited crystalline fraction remaining after irradiation to 8 × 1012 ions/cm2. In contrast, the local atomic arrangement, examined through pair distribution function analysis, shows only subtle changes after irradiation and is still described best by the original orthorhombic structural model. A comparison to Dy2Ti2O7 pyrochlore oxide under the same irradiation conditions reveals a different behavior: while the dysprosium titanate pyrochlore is more radiation resistant over the long-range with smaller degree of amorphization as compared to Dy2TiO5, the former involves more local atomic rearrangements, best described by a pyrochlore-to-weberite-type transformation. These results highlight the importance of short-range and medium-range order analysis for a comprehensive description of radiation behavior.

scholarly journals Proton therapy for craniopharyngioma in adults: a protocol for systematic review and meta-analysis

BMJ Open ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. e046043
Author(s):  
Pengtao Li ◽  
Jialing Wang ◽  
Aximujiang Axier ◽  
Kai Zhou ◽  
Jingwei Yun ◽  
...  
Keyword(s):  
Proton Therapy ◽  
Ion Beam ◽  
Grey Literature ◽  
Intervention Group ◽  
Heavy Ion ◽  
Cochrane Library ◽  
Secondary Outcome ◽  
Significant Heterogeneity ◽  
Recurrence Rates ◽  
X Ray

IntroductionCraniopharyngioma is the most challenging to treat brain tumour with high recurrence rates, which can be effectively reduced by adjuvant radiotherapy. In recent years, proton therapy (PT), with its physical properties of heavy ion beam, that is, Prague peak phenomenon, has been more frequently used in patients with craniopharyngioma. Compared with conventional X-ray beam radiotherapy, PT can reduce the damage to normal tissues and enlarge the damage to tumours. Some studies have shown that PT has advantages in the treatment of craniopharyngioma in adults. However, the optimal management of craniopharyngioma remains controversial. The purpose of this study was to evaluate the efficacy and safety of PT for craniopharyngioma in adults.Methods and analysisWe will search six databases (MEDLINE, EMBASE, Web of Science, the Cochrane Library, Amed, Scopus), clinical research registration websites and grey literature, aiming to identify randomised controlled trials (RCTs) on PT for craniopharyngioma in adults between 1 January 1954 and 28 September 2021. In the RCTs, PT will be used as the intervention group, and conventional X-ray beam radiotherapy will be used as the comparator group. Tumour recurrence and survival will be the primary outcome, and treatment-related toxicity will be the secondary outcome. The study selection, data extraction, bias risk and quality evaluation will be operated by two to four researchers independently. We will use Review Manager V.5.2 (RevMan V.5.2) for data analysis. If there is significant heterogeneity, we will identify the source of heterogeneity by subgroup analysis.Ethics and disseminationOur study is based on existing RCTs and does not require ethical approval. The results of the study will be published in a peer-reviewed journal or at a related conference.PROSPERO registration numberCRD42020200909.

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