Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B909 ◽  
Author(s):  
S. L. A. Mello ◽  
M. M. Sant'Anna ◽  
C. F. S. Codeço ◽  
S. N. Dong ◽  
T. Yoo ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ion Beam ◽  
Ion Beam Modification

Ion-beam modification of Co/Ag multilayers II: Variation of structural and magnetic properties with Co layer thickness

2000 ◽  
Vol 87 (12) ◽  
pp. 8513-8521 ◽  
Author(s):  
T. Veres ◽  
M. Cai ◽  
S. Germain ◽  
M. Rouabhi ◽  
F. Schiettekatte ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Layer Thickness ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Structural And Magnetic Properties

scholarly journals Ion-beam modification of the magnetic properties ofGa1−xMnxAsepilayers

2010 ◽  
Vol 81 (24) ◽  
Author(s):  
E. H. C. P. Sinnecker ◽  
G. M. Penello ◽  
T. G. Rappoport ◽  
M. M. Sant’Anna ◽  
D. E. R. Souza ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ion Beam ◽  
Ion Beam Modification

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Effect of ion-beam bombardment on microstructural and magnetic properties of Ni80Fe20/α-Fe2O3thin films

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JB03 ◽  
Author(s):  
Chao Zheng ◽  
Tien-Chi Lan ◽  
Chin Shueh ◽  
Ryan D. Desautels ◽  
Johan van Lierop ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ion Beam

Focused Helium and Neon Ion Beam Modification of High-T C Superconductors and Magnetic Materials

2016 ◽  
pp. 415-445 ◽  
Author(s):  
Shane A. Cybart ◽  
Rantej Bali ◽  
Gregor Hlawacek ◽  
Falk Röder ◽  
Jürgen Fassbender
Keyword(s):  
Magnetic Materials ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Neon Ion
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