A revised model of silicon oxidation during the dissolution of silicon in HF/HNO3 mixtures

This article presents a comprehensive quantification of the gaseous and dissolved reaction products formed during the etching of Si in HF/HNO3 mixtures and provides a revised model of HNO3 reduction during the oxidation of Si.

Модель термического окисления кремния

Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.