Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors

Kyoung-Tae Kim; Gwan-Ha Kim; Jong-Chang Woo; Chang-II Kim

doi:10.1116/1.2960555

Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2960555 ◽

2008 ◽

Vol 26 (5) ◽

pp. 1178-1181 ◽

Cited By ~ 3

Author(s):

Kyoung-Tae Kim ◽

Gwan-Ha Kim ◽

Jong-Chang Woo ◽

Chang-II Kim

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Ferroelectric Properties ◽

Buffer Layers

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Applied Physics Letters ◽

10.1063/1.122943 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3941-3943 ◽

Cited By ~ 53

Author(s):

Nasir Abdul Basit ◽

Hong Koo Kim ◽

Jean Blachere

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates

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Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

MRS Proceedings ◽

10.1557/proc-379-309 ◽

1995 ◽

Vol 379 ◽

Cited By ~ 1

Author(s):

Jeffrey J. Welser

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers ◽

Mos Transistors ◽

Strained Si ◽

Self Heating ◽

Experimental Application ◽

Heating Effects ◽

Enhanced Mobility ◽

Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

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Characteristics of Pt/Bi3.25La0.75Ti3O12/ZrO2/Si structures using ZrO2 as buffer layers for ferroelectric-gate field-effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1759352 ◽

2004 ◽

Vol 22 (4) ◽

pp. 1739-1742 ◽

Cited By ~ 5

Author(s):

Jung-Mi Lee ◽

Kyoung-Tae Kim ◽

Chang-Il Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers

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Ferroelectric-Modulated MoS2 Field-Effect Transistors as Multilevel Nonvolatile Memory

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c09951 ◽

2020 ◽

Vol 12 (40) ◽

pp. 44902-44911

Author(s):

Liping Xu ◽

Zhihua Duan ◽

Peng Zhang ◽

Xiang Wang ◽

Jinzhong Zhang ◽

...

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors

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Influence ofp‐InP buffer layers on submicron InGaAs/InP junction field‐effect transistors

Applied Physics Letters ◽

10.1063/1.100194 ◽

1988 ◽

Vol 53 (25) ◽

pp. 2513-2515 ◽

Cited By ~ 3

Author(s):

K. Steiner ◽

U. Seiler ◽

K. Heime ◽

E. Kuphal

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers ◽

Junction Field Effect Transistors

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Characteristics of LaAlO3as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6899 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6899-6903 ◽

Cited By ~ 6

Author(s):

Seung-Kuk Kang ◽

Hiroshi Ishiwara

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers

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Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

Journal of Electronic Materials ◽

10.1007/s11664-013-2724-7 ◽

2013 ◽

Vol 42 (11) ◽

pp. 3275-3282 ◽

Cited By ~ 2

Author(s):

Ernesto Suarez ◽

Pik-Yiu Chan ◽

Murali Lingalugari ◽

John E. Ayers ◽

Evan Heller ◽

...

Keyword(s):

Quantum Dot ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator

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