junction field effect transistors Latest Research Papers

Mixed‐Dimensional MoS 2 /Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection

Advanced Functional Materials ◽

10.1002/adfm.202110181 ◽

2021 ◽

pp. 2110181

Author(s):

Bo Wang ◽

Liming Wang ◽

Yichi Zhang ◽

Maolong Yang ◽

Dongdong Lin ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Logic Operation ◽

Junction Field Effect Transistors

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Improvement of β-Ga2O3 Junction Field-Effect Transistors By Employing WSe2/β-Ga2O3 p-n Heterojunction Via Laser-Assisted Oxidation

ECS Meeting Abstracts ◽

10.1149/ma2021-02351910mtgabs ◽

2021 ◽

Vol MA2021-02 (35) ◽

pp. 1910-1910

Author(s):

Sanghyun Moon ◽

Jinho Bae ◽

Jihyun Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Junction Field Effect Transistors

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Junction Field‐Effect Transistors Based on PdSe 2 /MoS 2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

Advanced Functional Materials ◽

10.1002/adfm.202106105 ◽

2021 ◽

pp. 2106105

Author(s):

Haoyun Wang ◽

Zexin Li ◽

Dongyan Li ◽

Xiang Xu ◽

Ping Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Responsivity ◽

Junction Field Effect Transistors

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Ambipolar Channel p‐TMD/n‐Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel

Advanced Materials ◽

10.1002/adma.202103079 ◽

2021 ◽

pp. 2103079

Author(s):

Wonjun Choi ◽

Jongtae Ahn ◽

Ki‐Tae Kim ◽

Hye‐Jin Jin ◽

Sungjae Hong ◽

...

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Junction Field Effect Transistors

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High Noise Margin, Digital Logic Design Using Josephson Junction Field-Effect Transistors for Cryogenic Computing

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2021.3054347 ◽

2021 ◽

Vol 31 (5) ◽

pp. 1-5

Author(s):

Siddhartha Raman Sundara Raman ◽

Feng Wen ◽

Ravi Pillarisetty ◽

Vivek De ◽

Jaydeep P. Kulkarni

Keyword(s):

Josephson Junction ◽

Field Effect ◽

Field Effect Transistors ◽

Digital Logic ◽

Logic Design ◽

High Noise ◽

Noise Margin ◽

Junction Field Effect Transistors

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All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Advanced Electronic Materials ◽

10.1002/aelm.202000883 ◽

2021 ◽

pp. 2000883

Author(s):

Anna Reinhardt ◽

Holger Wenckstern ◽

Marius Grundmann

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Junction Field Effect Transistors

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High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface

ACS Nano ◽

10.1021/acsnano.0c06509 ◽

2020 ◽

Vol 14 (11) ◽

pp. 15646-15653

Author(s):

Hyung Gon Shin ◽

Donghee Kang ◽

Yeonsu Jeong ◽

Kitae Kim ◽

Yongjae Cho ◽

...

Keyword(s):

Transition Metal ◽

Field Effect ◽

High Performance ◽

Organic Molecule ◽

Field Effect Transistors ◽

Van Der Waals ◽

Transition Metal Dichalcogenide ◽

Junction Field Effect Transistors

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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors Operational at 400 ℃

Chinese Physics B ◽

10.1088/1674-1056/abc0df ◽

2020 ◽

Author(s):

Si-Cheng Liu ◽

Xiao-Yan Tang ◽

Qing-Wen Song ◽

Hao Yuan ◽

Yi-Meng Zhang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Junction Field Effect Transistors

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GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3010183 ◽

2020 ◽

Vol 67 (10) ◽

pp. 3972-3977 ◽

Cited By ~ 1

Author(s):

Chen Yang ◽

Houqiang Fu ◽

Viswanathan Naveen Kumar ◽

Kai Fu ◽

Hanxiao Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Vertical Channel ◽

Junction Field Effect Transistors

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Measurement and Compact Modeling of Noise Characteristics in Complementary Junction Field-Effect Transistors

2020 IEEE East-West Design & Test Symposium (EWDTS) ◽

10.1109/ewdts50664.2020.9225017 ◽

2020 ◽

Author(s):

Alexandr M. Pilipenko ◽

Fedor A. Tsvetkov ◽

Nikolay N. Prokopenko

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Compact Modeling ◽

Noise Characteristics ◽

Junction Field Effect Transistors

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junction field effect transistors
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Mixed‐Dimensional MoS 2 /Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection

Improvement of β-Ga2O3 Junction Field-Effect Transistors By Employing WSe2/β-Ga2O3 p-n Heterojunction Via Laser-Assisted Oxidation

Junction Field‐Effect Transistors Based on PdSe 2 /MoS 2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

Ambipolar Channel p‐TMD/n‐Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel

High Noise Margin, Digital Logic Design Using Josephson Junction Field-Effect Transistors for Cryogenic Computing

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors Operational at 400 ℃

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

Measurement and Compact Modeling of Noise Characteristics in Complementary Junction Field-Effect Transistors

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junction field effect transistorsRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Mixed‐Dimensional MoS 2 /Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection

Improvement of β-Ga2O3 Junction Field-Effect Transistors By Employing WSe2/β-Ga2O3 p-n Heterojunction Via Laser-Assisted Oxidation

Junction Field‐Effect Transistors Based on PdSe 2 /MoS 2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

Ambipolar Channel p‐TMD/n‐Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel

High Noise Margin, Digital Logic Design Using Josephson Junction Field-Effect Transistors for Cryogenic Computing

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors Operational at 400 ℃

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

Measurement and Compact Modeling of Noise Characteristics in Complementary Junction Field-Effect Transistors

junction field effect transistors
Recently Published Documents